M5M467405BTP-6S datasheet, PDF

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M5M467405BTP-6S: DescriptionEDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM; Categorystorage storage; File Size244KB，39 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M467405BTP-6S Overview

EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM

M5M467405BTP-6S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	TSOP
package instruction	TSOP2, TSOP32,.46
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	CAS BEFORE RAS/HIDDEELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	20.95 mm
memory density	67108864 bi
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	32
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP32,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Maximum standby current	0.0003 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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(Rev. 1.1)

MITSUBISHI LSIs

M5M467405/465405BJ,BTP -5,-6,-5S,-6S

M5M467805/465805BJ,BTP -5,-6,-5S,-6S

M5M465165BJ,BTP -5,-6,-5S,-6S

EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM

EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM

EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM

DESCRIPTION

The M5M467405/465405BJ,BTP is organized 16777216-word by 4-bit, M5M467805/465805BJ,BTP is organized 8388608-word by

8-bit, and M5M465165BJ,BTP is organized 4194304-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS

process, and are suitable for large-capacity memory systems with high speed and low power dissipation.

The use of double-layer aluminum process combined with CMOS technology and a single-transistor dynamic storage stacked

capacitor cell provide high circuit density. Multiplexed address inputs permit both a reduction in pins and an increase in system

densities.

FEATURES

Type name

M5M467405BXX-5,5S

M5M467805BXX-5,5S

M5M467405BXX-6,6S

M5M467805BXX-6,6S

M5M465405BXX-5,5S

M5M465805BXX-5,5S

M5M465405BXX-6,6S

M5M465805BXX-6,6S

Address

Power

RAS

CAS

Cycle

access access access

access

dissipa-

time

tion

time

(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)

Type name

Power

Address

RAS

CAS

Cycle

dissipa-

access access access

access

time

tion

time

(max.ns) (max.ns) (max.ns) (max.ns) (min.ns) (typ.mW)

104

300

250

390

325

M5M465165BXX-5,5S

M5M465165BXX-6,6S

104

420

390

XX=J,TP

Standard 32 pin SOJ, 32 pin TSOP (M5M467405Bxx/M5M465405Bxx/M5M467805Bxx/M5M465805Bxx)

Standard 50 pin SOJ, 50 pin TSOP (M5M465165Bxx)

Single 3.3

0.3V supply

Low stand-by power dissipation

1.8mW (Max)

LVCMOS input level

Low operating power dissipation

M5M467405Bxx-5,5S / M5M467805Bxx-5,5S

360.0mW (Max)

M5M467405Bxx-6,6S / M5M467805Bxx-6,6S

324.0mW (Max)

M5M465405Bxx-5,5S / M5M465805Bxx-5,5S

468.0mW (Max)

M5M465405Bxx-6,6S / M5M465805Bxx-6,6S

432.0mW (Max)

M5M465165Bxx-5,5S

504.0mW (Max)

M5M465165Bxx-6,6S

468.0mW (Max)

Self refresh capability*

Self refresh current

400µA (Max)

EDO mode , Read-modify-write, CAS before RAS refresh, Hidden refresh capabilities

Early-write mode , OE and W to control output buffer impedance

All inputs, outputs LVTTL compatible and low capacitance

:Applicable to self refresh version(M5M467405/465405/467805/465805/465165BJ,BTP-5S,-6S:option) only

ADDRESS

Part No.

Row Add Col Add

Refresh

Refresh Cycle

Normal

S-version

RAS Only Ref,Normal R/W 8192/64ms 8192/128ms

M5M467405Bxx A0-A12 A0-A10

CBR Ref,Hidden Ref

4096/64ms 4096/128ms

M5M465405Bxx A0-A11 A0-A11

RAS Only Ref,Normal R/W 4096/64ms 4096/128ms

CBR Ref,Hidden Ref

RAS Only Ref,Normal R/W 8192/64ms 8192/128ms

M5M467805Bxx A0-A12 A0-A9

CBR Ref,Hidden Ref

4096/64ms 4096/128ms

M5M465805Bxx A0-A11 A0-A10

RAS Only Ref,Normal R/W 4096/64ms 4096/128ms

CBR Ref,Hidden Ref

M5M465165Bxx A0-A11 A0-A9

RAS Only Ref,Normal R/W 4096/64ms 4096/128ms

CBR Ref,Hidden Ref

APPLICATION

Main memory unit for computers, Microcomputer memory, Refresh memory for CRT

MITSUBISHI

ELECTRIC

Jun. 1999

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