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30A02MH-TL-E

Description
Small Signal Bipolar Transistor, 0.7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SC-70, MCPH3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size473KB,6 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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30A02MH-TL-E Overview

Small Signal Bipolar Transistor, 0.7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SC-70, MCPH3, 3 PIN

30A02MH-TL-E Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)520 MHz
Base Number Matches1
Ordering number : EN7359A
30A02MH
SANYO Semiconductors
DATA SHEET
30A02MH
Applications
PNP Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Amplifier Applications
Low-frequency Amplifier, high-speed switching small motor drive
Features
Large current capacity
Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580m
Ω
[IC=0.7A, IB=35mA]
Small ON-resistance (Ron)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
When mounted on ceramic substrate (600mm
×0.8mm)
2
Conditions
Ratings
--30
--30
-
-5
--700
--1.4
600
150
-
-55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Package Dimensions
unit : mm (typ)
7019A-004
30A02MH-TL-E
30A02MH-TL-H
0 to 0.02
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
0.25
2.0
3
0.15
Packing Type : TL
Marking
2.1
1.6
AL
LOT No.
LOT No.
0.25
1
0.65
2
0.3
TL
Electrical Connection
3
0.85
0.07
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
1
2
http://semicon.sanyo.com/en/network
71112 TKIM/O3003 TSIM TA-100125 No.7359-1/6

30A02MH-TL-E Related Products

30A02MH-TL-E 30A02MH-TL-H
Description Small Signal Bipolar Transistor, 0.7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SC-70, MCPH3, 3 PIN Small Signal Bipolar Transistor, 0.7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND LEAD FREE, SC-70, MCPH3, 3 PIN
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.7 A 0.7 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 200 200
JESD-30 code R-PDSO-F3 R-PDSO-F3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 520 MHz 520 MHz
Base Number Matches 1 1
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