|
BB814E6433 |
BB814E6327 |
| Description |
Variable Capacitance Diode, 44.75pF C(T), 20V, Silicon |
Variable Capacitance Diode, 44.75pF C(T), 20V, Silicon |
| Maker |
SIEMENS |
SIEMENS |
| package instruction |
R-PDSO-G3 |
R-PDSO-G3 |
| Reach Compliance Code |
unknown |
unknown |
| ECCN code |
EAR99 |
EAR99 |
| Minimum breakdown voltage |
20 V |
20 V |
| Configuration |
COMMON CATHODE, 2 ELEMENTS |
COMMON CATHODE, 2 ELEMENTS |
| Minimum diode capacitance ratio |
2.05 |
2.05 |
| Nominal diode capacitance |
44.75 pF |
44.75 pF |
| Diode component materials |
SILICON |
SILICON |
| Diode type |
VARIABLE CAPACITANCE DIODE |
VARIABLE CAPACITANCE DIODE |
| JESD-30 code |
R-PDSO-G3 |
R-PDSO-G3 |
| Number of components |
2 |
2 |
| Number of terminals |
3 |
3 |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
SMALL OUTLINE |
SMALL OUTLINE |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
YES |
YES |
| Terminal form |
GULL WING |
GULL WING |
| Terminal location |
DUAL |
DUAL |
| Base Number Matches |
1 |
1 |