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DF5A3.6JELM(T

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size170KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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DF5A3.6JELM(T Overview

Zener Diode

DF5A3.6JELM(T Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Diode typeZENER DIODE
Base Number Matches1
DF5A3.6JE
TOSHIBA Diodes for Protecting against ESD
DF5A3.6JE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
150
−55
to 150
Unit
MW
°C
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1−2W1A
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Weight: 0.003 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 1 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
3.4
Typ.
3.6
110
Max
3.8
130
10
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
Start of commercial production
2002-03
1
2014-03-01

DF5A3.6JELM(T Related Products

DF5A3.6JELM(T DF5A3.6JE,LM(T DF5A3.6JE(TE85LF) DF5A3.6JE(TE85L,F) DF5A3.6JE,LM
Description Zener Diode Zener Diode Zener Diode TVS DIODE 1VWM ESV TVS DIODE 1VWM ESV PAC
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor - -
Reach Compliance Code unknown unknown unknown unknown -
Diode type ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE -
Base Number Matches 1 1 1 1 -

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