DCR1473SY/SV
Phase Control Thyristor
Replaces June 2004 version DS4652-7.0
DS4652-8.0 JUNE 2006 (LN24655)
FEATURES
•
•
•
Double Side Cooling
High Surge Capability
Low Turn-on Losses
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
1200V
4135A
64000A
1000V/µs
500A/µs
APPLICATIONS
•
•
•
High Voltage Power Converters
DC Motor Control
High Voltage Power Supplies
* Higher dV/dt selection available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
1200
1200
Conditions
DCR1473SY12
Or
DCR1473SV12
T
vj
= 0° to 125°
C
C,
I
DRM
= I
RRM
= 250mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
(See Package Details for further information)
ORDERING INFORMATION
Fig. 1 Package outline
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1473SY12
for a 1200V ‘Y’ outline variant
Or
DCR1473SV12
for a 1200V ‘V’ outline variant
If a lower voltage grade is required, then use
V
DRM
/100 for the grade required e.g.
DCR1473SY10
for a 1000V ‘Y’ outline variant
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR1473SY/SV
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60° unless stated otherwise
C
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
4135
6495
5700
A
A
A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
2605
4090
3290
A
A
A
T
case
= 80° unless stated otherwise
C
Symbol
Double Side Cooled
I
T(AV
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
3190
5010
3950
A
A
A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1966
3090
2410
A
A
A
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DCR1473SY/SV
SEMICONDUCTOR
SURGE RATINGS
Symbol
I
TSM
It
I
TSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge ( non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 125°
C
V
R
= 50%VRRM - ¼ Sine
10ms half sine, T
case
= 125°
C
V
R
= 0
Max.
51
13.1×10
64
20.48×10
6
6
Units
kA
As
kA
As
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 43kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
38
Max.
0.0095
0.019
-
0.002
0.004
135
125
125
47
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C
°
C
°
C
kN
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DCR1473SY/SV
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°
C
To 67% V
DRM
, T
j
= 125° gate open
C,
From 67% V
DRM
to 1000A
Gate source 20V, 10Ω,
t
r
= 0.5µs to 1A, T
j
= 125°
C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
250
1000
250
500
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
r
T
t
gd
Threshold voltage – Low level
On-state slope resistance – Low level
Delay time
At T
vj
= 125°
C
At T
vj
= 125°
C
V
D
= 67% V
DRM
, gate source 30V, 15Ω
t
r
= 0.5µs, T
j
= 25°
C
-
-
-
0.824
0.066
2
V
mΩ
µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Peak forward gate voltage
Peak forward gate voltage
Peak forward gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25°
C
At V
DRM,
T
case
= 125°
C
V
DRM
= 5V, T
case
= 25°
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See Gate Characteristics curve/table
-
Max.
4
0.25
400
30
0.25
5
30
150
10
Units
V
V
mA
V
V
V
A
W
W
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DCR1473SY/SV
SEMICONDUCTOR
5000
Mean Power Dissipation (W)
4000
3000
2000
dc
180sine
1000
120 square
60 square
30 square
0
0
1000
2000
3000
4000
Mean on-state Current (A)
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Power dissipation curves
Fig.4 Gate characteristics
Fig.5
Surge (non-repetitive) on-state current vs time
(with 50%V
RRM
at T
case
125°
C)
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