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SSS1N50B

Description
520V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size628KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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SSS1N50B Overview

520V N-Channel MOSFET

SSS1N50B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220F
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Code_compli
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)100 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)1.2 A
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance5.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)23 W
Maximum pulsed drain current (IDM)5 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SSP1N50B
SSP1N50B
520V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
1.5A, 520V, R
DS(on)
= 5.3Ω @V
GS
= 10 V
Low gate charge ( typical 8.3 nC)
Low Crss ( typical 5.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
G
!
G DS
TO-220
SSP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
SSP1N50B
520
1.5
0.97
5.0
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
100
1.5
3.6
3.5
36
0.29
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
3.44
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, May 2002

SSS1N50B Related Products

SSS1N50B SSP1N50B
Description 520V N-Channel MOSFET 520V N-Channel MOSFET
Is it Rohs certified? conform to conform to
Parts packaging code TO-220F TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code _compli unknow
Is Samacsys N N
Avalanche Energy Efficiency Rating (Eas) 100 mJ 100 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 520 V
Maximum drain current (Abs) (ID) 1.2 A 1.5 A
Maximum drain current (ID) 1.5 A 1.5 A
Maximum drain-source on-resistance 5.3 Ω 5.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 23 W 36 W
Maximum pulsed drain current (IDM) 5 A 5 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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