KTA1664Q datasheet, PDF - EEWORLD Datasheet

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KTA1664Q: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size91KB，3 Pages; ManufacturerWeitron Technology; Websitehttp://weitron.com.tw/

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KTA1664Q Overview

Transistor

KTA1664Q Parametric

Parameter Name	Attribute value
Maker	Weitron Technology
package instruction	,
Reach Compliance Code	unknown
Base Number Matches	1

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KTA1664

NPN Epitaxial Planar Transistors

P b

Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

SOT-89

ABSOLUTE MAXIMUM RATINGS (T

=25˚C)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

CBO

CEO

EBO

stg

Limits

5.0

1.0

0.5

-55 to +150

Unit

˚C

ELECTRICAL CHARACTERISTICS(T

=25˚C unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

=50µA, I

Symbol

CBO

CEO

EBO

CBO

EBO

Min

Typ

Max

0.5

Unit

µA

Collector-Emitter Breakdown Voltage

=1mA, I

Emitter-Base Breakdown Voltage

=50µA, I

Collector Cuto Current

=20V, I

Collector Cuto Current

=4V, I

WEITRON

http://www.weitron.com.tw

1/3

11-Dec-08

KTA1664Q Related Products

	KTA1664Q	KTA1664P
Description	Transistor	Transistor
Maker	Weitron Technology	Weitron Technology
Reach Compliance Code	unknown	unknown
Base Number Matches	1	1

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