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BG3130R-E6433

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size84KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BG3130R-E6433 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BG3130R-E6433 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Reach Compliance Codecompliant
Maximum drain current (Abs) (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
BG3130...
DUAL N-Channel MOSFET Tetrode
Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
Two AGC amplifiers in one single package
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
4
5
6
1
2
3
BG3130
BG3130R
Drain
$
#
"
*
)

!
AGC
RF
Input RG1
VGG
G2
G1
RF Output
+ DC
GND
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BG3130
BG3130R
Package
SOT363
SOT363
1=G1* 2=G2
1=G1* 2=S
Pin Configuration
3=D*
3=D*
4=D**
4=D**
5=S
5=G2
Marking
6=G1** KAs
6=G1** KHs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2007-06-01

BG3130R-E6433 Related Products

BG3130R-E6433 BG3130-E6433 BG3130-E6327 BG3130RH6327XTSA1
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET MOSFET TV AND SAT TUNER DIODES
Is it Rohs certified? conform to conform to conform to conform to
Maker Infineon Infineon Infineon Infineon
Reach Compliance Code compliant compliant unknown compliant
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE DUAL GATE, DEPLETION MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES YES
Base Number Matches 1 1 1 1
Maximum drain current (Abs) (ID) 0.025 A 0.025 A 0.025 A -
Maximum operating temperature 150 °C 150 °C 150 °C -
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W -
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