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30SLJQ045PBF

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size78KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

30SLJQ045PBF Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN

30SLJQ045PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionR-CBCC-N3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CBCC-N3
Maximum non-repetitive peak forward current270 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current30 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage45 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
Base Number Matches1
PD - 93949A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30SLJQ045
30 Amp, 45V
Major Ratings and Characteristics
Description/Features
The 30SLJQ045 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic surface mount
SMD-0.5 ceramic package. The device's forward voltage
drop and reverse leakage current are optimized for the
lowest power loss and the highest circuit efficiency for typical
high frequency switching power supplies and resonent
power converters. Full
MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
Characteristics
I
F(AV)
V
RRM
I
FSM
@ tp = 8.3ms half-sine
V
F
@ 30Apk, T
J
=125°C
30SLJQ045 Units
30
A
45
270
0.71
V
A
V
T
J
, T
stg
Operating and storage
-55 to 150
°C
CASE STYLE
CATHODE ANODE ANODE
IR Case Style SMD-0.5
www.irf.com
1
10/03/00
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