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DATA SHEET
THYRISTORS
3P4J,3P4J-Z,3P4J-ZK
3 A MOLD THYRISTOR
The 3P4J, 3P4J-Z, and 3P4J-ZK are a P gate all diffused mold type Thyristor granted 3 A On-state Average Current (T
C
=
103°C) with rated voltages up to 400 V.
<R>
FEATURES
• For a small and light package, miniaturization of a set is easy.
• Suitable for capacitor discharge applications with high pulse current rating.
• I
GT
≤
100
μ
A
• Surface mounting (3P4J-Z, 3P4J-ZK)
<R>
APPLICATIONS
• Contact-less switch for electronic devices, ignition devices, electronic household appliances and other light industry
equipment
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18333EJ3V0DS00 (3rd edition)
(Previous No. SC-2109)
Date Published September 2006 NS CP(K)
Printed in Japan
1988, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
3P4J,3P4J-Z,3P4J-ZK
MAXIMUM RATINGS
<R>
CHARACTERISTICS
Non-repetitive Peak Reverse Voltage
Non-repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Off-state Voltage
Average On-state Current
Effective On-state Current
Surge On-state Current
Fusing Current
Critical Rate Rise of On-state Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Forward Current
Peak Gate Reverse Voltage
Junction Temperature
Storage Temperature
SYMBOL
V
RSM
V
DSM
V
RRM
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
3P4J, 3P4J-Z, 3P4J-ZK
500
500
400
400
3 (T
C
= 103°C,
θ
= 180°, Single phase half wave)
4
40 (f = 50 Hz, sine half wave, 1 cycle)
6 (1 ms
≤
t
≤
10 ms)
50
1 (f
≥
50 Hz, Duty
≤
10%)
0.2
0.5 (f
≥
50 Hz, Duty
≤
10%)
6
−40
to +125
−55
to +150
UNIT
V
V
V
V
A
A
A
As
A/
μ
s
W
W
A
V
°C
°C
2
REMARK
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
See Fig. 11
See Fig. 2
−
−
−
−
−
−
−
−
∫
i
T
2
dt
dI
T
/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
j
T
stg
<R>
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, R
GK
= 1 kΩ)
CHARACTERISTICS
Repetitive Peak Reverse Current
Repetitive Peak Off-state Current
Critical Rate Rise of Off-state Voltage
On-state Voltage
Gate-trigger Current
Gate-trigger Voltage
Gate Non-trigger Voltage
Holding Current
Circuit Commuted Turn-off Time
SYMBOL
I
RRM
I
DRM
dV
D
/dt
V
TM
I
GT
V
GT
V
GD
I
H
t
q
TEST CONDITIONS
V
RM
= 400 V
V
DM
= 400 V
V
DM
= 270 V, T
j
= 125°C
I
TM
= 4 A
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 6 V, R
L
= 100
Ω
V
DM
= 200 V, T
j
= 125°C
V
DM
= 24 V, I
TM
= 5 A
I
TM
= 2 A, V
R
≥
25 V
V
DM
= 270 V, dI
R
/dt = 15 A/
μ
s
dV
D
/dt = 1 V/
μ
s, T
j
= 125°C
Thermal Resistance
2
MIN.
TYP.
MAX.
50
1
50
1
UNIT
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
−
−
−
−
−
−
−
−
0.2
−
−
−
−
10
μ
A
mA
μ
A
mA
V/
μ
s
V
−
1.4
100
0.8
−
−
−
−
−
30
μ
A
V
V
mA
−
5
−
−
−
μ
s
R
th(j-c)
R
th(j-a)
Junction to case DC
Junction to ambient DC
Note
−
−
−
−
4.0
62.5
°C/W
Note
Mount on 2 x 3.75 cm ceramic substrate
2
Data Sheet D18333EJ3V0DS
FPGA/CPLD
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