M54HC166
M74HC166
8 BIT PISO SHIFT REGISTER
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HIGH SPEED
f
MAX
= 57 MHz (TYP.) AT V
CC
= 5 V
LOW POWER DISSIPATION
I
CC
= 4
µA
(MAX.) AT T
A
= 25
°C
HIGH NOISE IMMUNITY
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
|I
OH
| = I
OL
= 4 mA (MIN.)
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
WIDE OPERATING VOLTAGE RANGE
V
CC
(OPR) = 2 V TO 6 V
PIN AND FUNCTION COMPATIBLE WITH
54/74LS166
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
ORDER CODES :
M54HC166F1R
M74HC166M1R
M74HC166B1R
M74HC166C1R
PIN CONNECTIONS
(top view)
DESCRIPTION
The M54/74HC166 is a high speed C
2
MOS 8 BIT
PISO SHIFT REGISTER fabricated in silicon gate
C
2
MOS technology. It has the same high speed per-
formance of LSTTL combined with true CMOS low
power consumption.
It consists of parallel or serial inputs and a serial-out
8-bit shift register with gated clock inputs and an
overriding clear input. The parallel-in or serial-in
modes are controlled by the SHIFT/LOAD input.
When the SHIFT/LOAD input is held high, the serial
data input is enabled and the eight flip-flops perform
serial shifting with each clock pulse. When held low,
the parallel data inputs are enabled and syn-
chronous loading occurs on the next clock pulse.
Clocking is accomplished on the low-to-high level
edge of the clock pulse. The CLOCK-INHIBIT input
should be changed to the high only while the
CLOCK input is held high. A direct clear input over-
rides all other inputs, including the clock, and sets
all flip-flops to zero. Functional details are shown in
the truth table and the timing chart.
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
October 1992
NC =
No Inter-
nal Con-
1/13
M54/M74HC166
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
or I
GND
P
D
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
DC V
CC
or Ground Current
Power Dissipation
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500 (*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW:
≅
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Parameter
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature:
M54HC
Series
M74HC
Series
Input Rise and Fall Time
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to +125
-40 to +85
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
C
o
C
ns
o
V
CC
= 2 V
V
CC
= 4.5 V
V
CC
= 6 V
4/13
Embedded System
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