MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54519P and M54519FP are seven-circuit Darlington tran-
sistor arrays. The circuits are made of NPN transistors. Both
the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
16
→O1
15
→O2
14
→O3
13
→O4
12
→O5
11
→O6
10
→O7
9
NC
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND
8
FEATURES
High breakdown voltage (BV
CEO
≥
40V)
High-current driving (Ic(max) = 400mA)
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
½
OUTPUT
16P4(P)
Package type 16P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
OUTPUT
INPUT
20K
20K
2K
GND
FUNCTION
The M54519P and M54519FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20kΩ between input transistor bases and input pins.
The output transistor emitters are all connected to the GND
pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 40V maximum.
The M54519FP is enclosed in a molded small flat package,
enabling space-saving design.
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +40
400
–0.5 ~ +40
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol
V
O
Output voltage
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more than 30%
FP : no more than 25%
I
C
≤
400mA
“H” input voltage
I
C
≤
200mA
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
“L” input voltage
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Limits
min
0
0
0
8
5
0
typ
—
—
—
—
—
—
max
40
400
Unit
V
I
C
mA
200
30
0.5
V
V
V
IH
V
IL
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) CEO
V
CE (sat)
I
I
h
FE
Parameter
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Test conditions
I
CEO
= 100µA
V
I
= 8V, I
C
= 400mA
V
I
= 5V, I
C
= 200mA
V
I
= 17V
V
CE
= 4V, I
C
= 400mA, Ta = 25°C
Limits
min
40
—
—
0.3
1000
typ
+
—
1.3
1.0
0.8
6000
max
—
2.4
1.6
1.8
—
Unit
V
V
mA
—
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
DC amplification factor
+
: The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Symbol
t
on
t
off
Parameter
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
Test conditions
Limits
min
—
—
typ
40
400
max
—
—
Unit
ns
ns
NOTE 1 TEST CIRCUIT
INPUT
Measured device
V
O
TIMING DIAGRAM
50%
R
L
OUTPUT
50%
INPUT
PG
50Ω
C
L
OUTPUT
50%
50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
P
= 8V
P-P
(2) Input-output conditions : R
L
= 25Ω, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
toff
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
400
V
I
= 5V
Thermal Derating Factor Characteristics
2.0
Power dissipation Pd (W)
1.5
M54519P
Collector current Ic (mA)
300
1.0
M54519FP
200
Ta = 75°C
0.5
100
Ta = 25°C
Ta = –20°C
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta (°C)
Duty-Cycle-Collector Characteristics
(M54519P)
500
300
500
Output saturation voltage V
CE
(sat) (V)
Duty-Cycle-Collector Characteristics
(M54519P)
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
200
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54519FP)
500
500
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54519FP)
Collector current Ic (mA)
Collector current Ic (mA)
400
400
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
300
100
200
•The collector current values
represent the current per circuit.
•Repeated frequency
≥
10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
100
•Ta = 75°C
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DC Amplification Factor
Collector Current Characteristics
10
4
7
V
CE
= 4V
Ta = 75°C
Grounded Emitter Transfer Characteristics
400
V
CE
= 4V
Ta = 75°C
Ta = –20°C
DC amplification factor h
FE
5
Collector current Ic (mA)
3
2
300
Ta = 25°C
Ta = 25°C
Ta = –20°C
10
3
7
5
3
2
200
100
10
2 1
10
2
3
5 7
10
2
2
3
5 7
10
3
0
0
1
2
3
4
Collector current Ic (mA)
Input voltage V
I
(V)
Input Characteristics
2.0
Input current I
I
(mA)
1.5
1.0
Ta = –20°C
0.5
Ta = 25°C
Ta = 75°C
0
0
5
10
15
20
Input voltage V
I
(V)
Aug. 1999
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