The UT54ACS74 and the UT54ACTS74 contain two indepen-
dent D-type positive triggered flip-flops. A low level at the
Preset or Clear inputs sets or resets the outputs regardless of the
levels of the other inputs. When Preset and Clear are inactive
(high), data at the D input meeting the setup time requirement
is transferred to the outputs on the positive-going edge of the
clock pulse. Following the hold time interval, data at the D
input may be changed without affecting the levels at the outputs.
The devices are characterized over full military temperature
range of -55°C to +125°C.
FUNCTION TABLE
INPUTS
PRE
L
H
L
H
H
H
CLR
H
L
L
H
H
H
CLK
X
X
X
↑
↑
L
D
X
X
X
H
L
X
OUTPUT
Q
H
L
H
1
PINOUTS
14-Pin DIP
Top View
CLR1
D1
CLK1
PRE1
Q1
Q1
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
CLR2
D2
CLK2
PRE2
Q2
Q2
14-Lead Flatpack
Top View
CLR1
D1
CLK1
PRE1
Q1
Q1
V
SS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
DD
CLR2
D2
CLK2
PRE2
Q2
Q2
LOGIC SYMBOL
PRE1
CLK1
D1
CLR1
PRE2
CLK2
D2
CLR2
(4)
(3)
(2)
(1)
(10)
(11)
(12)
(13)
(9)
(8)
Q2
Q2
S
C1
D1
R
(5)
(6)
Q1
Q1
Q
L
H
H
L
H
Q
o
1
H
L
Q
o
Note:
1. The output levels in this configuration are not guaranteed to meet the minimum
levels for V
OH
if the lows at preset and clear are near V
IL
maximum. In
addition, this configuration is nonstable; that is, it will not persist when either
preset or clear returns to its inactive (high) level.
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
1
LOGIC DIAGRAM
PRE
CLR
Q
CLK
Q
D
2
OPERATIONAL ENVIRONMENT
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
Θ
JC
I
I
P
D
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
±10
1
UNITS
V
V
°C
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
°C
3
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V
±
10%; V
SS
= 0V
6
, -55°C < T
C
< +125°C); Unless otherwise noted, Tc is per the temperature range ordered.
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
ΔI
DDQ
Power dissipation
2, 8, 9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100μA
I
OH
= -8.0mA
I
OH
= -100μA
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
15
15
pF
pF
1.9
10
1.6
mW/
MHz
μA
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
μA
0.40
0.25
V
V
OH
V
I
OS
I
OL
mA
mA
4
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%, -
50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are
guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density
≤
5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765
pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at
a frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose
≤
1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
[size=6]I would like to ask, has anyone done an experiment in which CY reads FPGA FIFO and transmits it to the host computer? Or a similar program? I don't know what the correct timing is for the rela...
The company plans to develop something on ARM. I would like to ask what else you need besides the software development platform and emulator? What is the approximate price? Thank you in advance....
I just made a minimum system board for PIC16F877A, using an external crystal oscillator with a crystal oscillator capacitor of 20pF. After burning a routine from the textbook into it, it runs normally...
[color=black][font=Verdana, Helvetica, Arial, sans-serif]The Lenovo laptop battery in the picture below is only 5600mAh, which is not as good as the three Xiaomi batteries in terms of numbers.[/font][...
In recent years, with the increasing demand for manufacturing and automated production management, industrial barcode scanners have gradually become an indispensable part of the industrial manufact...[Details]
Reflow soldering, a common soldering method in modern electronics manufacturing, primarily melts solder paste and pads to form solder joints. With technological advancements, soldering equipment ha...[Details]
As the number of cars increases, environmental pressures are also increasing. At this time, some people are saying that new energy vehicles are energy-efficient and environmentally friendly, and ar...[Details]
Recently, South Korean robotics giant WIRobotics launched its first general-purpose humanoid robot, ALLEX, at the Robotics Innovation Center (RIH) at the Korea University of Science and Technology....[Details]
On August 21st, Zhiyuan Robotics revealed at its first partner conference that it expects shipments to reach thousands of units this year and tens of thousands next year. The company hopes to reach...[Details]
Overview
As handheld voice communication devices become more and more popular, they are increasingly used in noisy environments, such as airports, busy roads, crowded bars, etc. In such noisy ...[Details]
Electric vehicles are becoming increasingly popular, with increasingly longer ranges. There are two ways to charge electric vehicles: slow charging and fast charging. Which is the most suitable? Sl...[Details]
Intel®
Xeon®
6
-
core processors now support the new Amazon EC2 R8i and R8i-flex instances on Amazon Web Services (AWS).
These new instances offer superior performance and fast...[Details]
MQTT Ethernet I/O modules primarily collect I/O port information and transmit data over the network. In addition to being a TCP server, Ethernet I/O modules can also function as TCP clients. Furthe...[Details]
The driving mode is not unfamiliar to vehicles. According to the driving mode of the vehicle, there are front-wheel drive, rear-wheel drive and even four-wheel drive. Four-wheel drive is a major se...[Details]
For today's new energy vehicles, they have different configurations from fuel vehicles, and some configurations have also become a selling point for manufacturers. Compared with traditional vehicle...[Details]
Consumer demand for premium listening experiences has driven rapid evolution in the wireless headphone market in recent years. Hybrid designs, which utilize two drivers per earbud to enhance sound ...[Details]
Definitions of VR
, AR, and MR:
What is Virtual Reality?
Virtual Reality (VR), also known as "spiritual realm" or "illusion," is a high-tech technology that has emerged in recent ye...[Details]
In recent years, with the development of MOSFETs, they have gradually replaced transistors in the low-power, fast-switching industry. Major manufacturers in this field have also been reducing their...[Details]
Electronic devices are small individual components in electronic circuits. Transistors are common electronic components. Because of their wide range of applications, according to the usage of the e...[Details]
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
