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258RLH100

Description
Silicon Controlled Rectifier, 390000mA I(T), 1000V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size107KB,1 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

258RLH100 Overview

Silicon Controlled Rectifier, 390000mA I(T), 1000V V(DRM),

258RLH100 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-MUPM-H3
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time30 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
JESD-30 codeO-MUPM-H3
Maximum leakage current60 mA
On-state non-repetitive peak current5500 A
Number of terminals3
Maximum on-state current390000 A
Maximum operating temperature125 °C
Minimum operating temperature-45 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Off-state repetitive peak voltage1000 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Trigger device typeSCR
Base Number Matches1
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