Advanced Analog Technology, Inc.
AAT8660 Series
Details are subject to change without notice.
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
Ideal for One-Cell Rechargeable Li-Ion
Battery Packs
High Accuracy Voltage Detection
Low Current Consumption:
3µA
Supply Current (Typical)
0.1
µ
A
Shutdown Current
GENERAL DESCRIPTION
The AAT8660 series are designed to protect
one-cell rechargeable Li-Ion battery pack against
over-charge, over-discharge, over-current and
short circuit. They use CMOS process to provide
high accuracy voltage detection and low current
consumption.
Each of the AAT8660 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
detector, and digital control circuit.
In the charge process, when the battery voltage is
charged to a value greater than V
C1
(Over-Charge
Threshold Voltage), the output of C
out
pin
switches to the low level, i.e., the
VN
pin level.
The output of C
out
pin will switch to high level
3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2 /
Short Circuit
Wide Operating
−
40
o
C to
+
85
o
C
Temperature
Range:
Small SOT26 Package
PIN CONFIGURATION
D
out
GND
VN
V
DD
NULL
when the battery voltage falls lower than V
C2
(Over-Charge Release Voltage), or when the
charger is disconnected from the battery pack and
the battery voltage level ranges between V
C1
and
V
C2
.
During the discharge process, when the battery
voltage drops to a value lower than
V
D1
C
out
(Over-Discharge Threshold Voltage), the output
of D
out
pin switches to low level immediately
after the internal delay time elapses. The output
of D
out
pin will switch to high level when the
battery voltage is at a level higher than V
D 2
(Over-Discharge Release Voltage).
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AAT8660 Series
Over current level 1 voltage ( V
OC1
) is used to
monitor the amount of discharge current. If the
discharge current is high enough to cause VN pin
voltage increase to a value greater than V
OC1
, the
output of D
out
pin will switch to a low level
after a delay time t
OC1
. If the load is removed
from battery pack, the output of D
out
will
change to a high level again.
The mechanism of short circuit protection is
identical to a discharge current. If the short circuit
current is high enough to cause VN pin voltage
increase to greater than V
short
, the output of D
out
pin will move to the low level after a delay
time t
short
, and the output of D
out
level will
change to high when the load is removed from
battery pack.
BLOCK DIAGRAM:
V
DD
D
out
C
out
GND
VN
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Advanced Analog Technology, Inc.
AAT8660 Series
PIN DESCRIPTION
PIN NO NAME
1
2
3
4
5
6
D
out
VN
C
out
NULL
V
DD
GND
I/O
O
I
O
╳
I
DESCRIPTION
Discharge Control Pin which Connects to External MOSFET Gate
Voltage Detection Pin between VN and GND
Charge Control Pin which Connects to External MOSFET Gate.
Null Pad.
Power Supply Input Pin
Ground
I
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Supply Voltage
VN Pin Input Voltage
D
out
Pin Output Voltage
C
out
Pin Output Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
DD
V
VN
V
Dout
V
Cout
P
d
T
C
T
storage
VALUE
−
0.3 to 8.0
V
DD
−
20 to V
DD
+
0.3
−
0.3 to V
DD
+
0.3
V
VN
−
0.3 to V
DD
+
0.3
150
−
40 to +85
−
40 to +125
UNIT
V
V
V
V
mW
o
o
C
C
RECOMMENDED OPERATING CONDITIONS
TEST CONDITION
Supply Voltage,
MIN
1.5
GND
VN
MAX
7.0
V
DD
V
DD
UNIT
V
V
V
V
DD
Voltage Defined as V
DD
to GND
D
out
Output Voltage
C
out
Output Voltage
OPERATION VOLTAGE AND OPERATION CURRENT
PARAMETER
Supply Current at Normal Operation
Mode
Standby Current at Power Down Mode
Operation Voltage between V
DD
and
VN
TEST CONDITION
V
DD
=3.3V; VN=0V; GND=0V
MIN
-
1.5
TYP
3.0
-
MAX
6.0
0.1
20.0
UNIT
µ
A
µ
A
V
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Advanced Analog Technology, Inc.
AAT8660 Series
AAT8660A DETECTION VOLTAGE AND DELAY TIME
(
25
o
C
)
PARAMETER
Over Charge Threshold Voltage
Over Charge Release Voltage
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
Over Charge Delay Time
Over Discharge Delay Time
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
SYMBOL
V
C1
V
C 2
V
D1
V
D 2
t
C1
t
D1
V
OC1
TEST CONDITION
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
V
DD
=
3.6V to 4.5V
V
DD
=
3.6V to 2.4V
Detect Rising Edge of “VN” Pin
Voltage ( D
out
Response with t
OC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D
out
Response
with t
OC2
Delay Time)
V
DD
=
3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D
out
Response with t
short
Delay
Time)
V
DD
=
3.0V
Room Temp.
⇒
Low or High Temp.
V
DD
=
3.0V
V
DD
=
3.0V
Detect Rising Edge of “ D
out
”
Pin Voltage (when V
D1
<
V
DD
<
V
D2
)
V
DD
=
3.5V ; C
out
=
3.0V ;
VN
=
0V
V
DD
=
4.5V ;
C
out
=
0.5V ; VN
=
0V
V
DD
=
3.5V ; D
out
=
3.0V ;
VN
=
0V
V
DD
=
1.8V ;
D
out
=
0.5V ; VN
=
1.8V
V
DD
=
1.8V ; VN
=
0V
V
DD
=
3.5V ; VN
=
3.5V
MIN
4.275
TYP
4.325
MAX
4.375
V
C1
-0.15
2.580
V
D1
+0.5
1.300
162.5
170
UNIT
V
V
V
V
s
ms
mV
V
C1
-0.35 V
C1
-0.25
2.420
V
D1
+0.3
0.700
87.5
130
2.500
V
D1
+0.4
1.000
125.0
150
V
OC 2
400
500
600
mV
Short Circuit Detection Voltage
Over Current Level 1 Detection
Delay Time
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
Charger Detection Voltage
C
out
High Level Resistance
V
short
V
DD
−
1.7
V
DD
−
1.3
V
DD
−
0.9
V
t
OC1
t
OC 2
t
short
V
CHR
R
COH
R
COL
R
DOH
R
DOL
R
VND
R
VNG
5.6
8.0
2.0
2.0
10
10.4
2.6
3.4
50
ms
ms
ms
⇒
1.4
1.1
µ
s
V
k
Ω
k
Ω
k
Ω
k
Ω
k
Ω
k
Ω
−
2.0
1
150
2.5
2.5
100
10
−
1.3
2
602
5.0
5.0
300
20
−
0.6
10
2,380
10.0
10.0
900
40
C
out
Low Level Resistance
D
out
High Level Resistance
D
out
Low Level Resistance
Internal Resistance between VN
and V
DD
Internal Resistance between VN
and GND
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Advanced Analog Technology, Inc.
AAT8660 Series
AAT8660B DETECTION VOLTAGE AND DELAY TIME (25℃)
PARAMETER
Over Charge Threshold Voltage
Over Charge Release Voltage
Over Discharge Threshold
Voltage
Over Discharge Release Voltage
Over Charge Delay Time
Over Discharge Delay Time
Over Current Level 1 Detection
Voltage
Over Current Level 2 Detection
Voltage
SYMBOL
V
C1
V
C 2
V
D1
V
D 2
t
C1
t
D1
V
OC1
TEST CONDITION
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
V
DD
=
3.6V to 4.5V
V
DD
=
3.6V to 2.4V
Detect Rising Edge of “VN” Pin
Voltage ( D
out
Response with
t
OC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage ( D
out
Response
with t
OC2
Delay Time)
V
DD
=
3.0V , Detect Rising Edge
of “VN” Pin Voltage
( D
out
Response with t
short
Delay Time)
V
DD
=
3.0V
Room Temp.
⇒
Low or High Temp.
V
DD
=
3.0V
V
DD
=
3.0V
Detect Rising Edge of “ D
out
”
Pin Voltage
(when V
D1
<
V
DD
<
V
D2
)
V
DD
=
3.5V ; C
OUT
=
3.0V ;
VN
=
0V
V
DD
=
4.5V ;
C
OUT
=
0.5V ; VN
=
0V
V
DD
=
3.5V ; D
out
=
3.0V ;
VN
=
0V
V
DD
=
1.8V ;
D
out
=
0.5V ; VN
=
1.8V
V
DD
=
1.8V ; VN
=
0V
V
DD
=
3.5V ; VN
=
3.5V
MIN
4.300
TYP
4.350
MAX
4.400
UNIT
V
V
V
V
s
ms
mV
V
C1
-0.30 V
C1
-0.20 V
C1
-0.10
2.220
V
D1
+0.6
0.088
22.4
130
2.300
V
D1
+0.7
0.125
32.0
150
2.380
V
D1
+0.8
0.163
41.6
170
V
OC 2
400
500
600
mV
Short Circuit Detection Voltage
Over Current Level 1 Detection
Delay Time
Over Current Level 2 Detection
Delay Time
Short Circuit Detection Delay
Time
Charger Detection Voltage
C
out
High Level Resistance
C
out
Low Level Resistance
D
out
High Level Resistance
D
out
Low Level Resistance
Internal Resistance between VN
and V
DD
Internal Resistance between VN
and GND
V
short
V
DD
−
1.7
V
DD
−
1.3
V
DD
−
0.9
V
t
OC1
t
OC 2
t
short
V
CHR
R
COH
R
COL
R
DOH
R
DOL
R
VND
R
VNG
2.8
4.0
2.0
2.0
10
5.2
2.6
3.4
50
ms
ms
ms
⇒
1.4
1.1
µ
s
V
k
Ω
k
Ω
k
Ω
k
Ω
k
Ω
k
Ω
−
2.0
1
150
2.5
2.5
100
10
−
1.3
2
602
5.0
5.0
300
20
−
0.6
10
2,380
10.0
10.0
900
40
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