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5082-2755

Description
Mixer Diode, Very High Frequency to Ultra High Frequency, 1600ohm Z(V) Max, Silicon, 01, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size12KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

5082-2755 Overview

Mixer Diode, Very High Frequency to Ultra High Frequency, 1600ohm Z(V) Max, Silicon, 01, 2 PIN

5082-2755 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionO-XALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
maximum impedance1600 Ω
minimum impedance1200 Ω
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating frequency15 GHz
Minimum operating frequency1 GHz
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountNO
Minimum tangent signal sensitivity55 dBm
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
5082-2755
SCHOTTKY BARRIER DIODE
PACKAGE STYLE 01
DESCRIPTION:
The
ASI 5082-2755
is a Silicon Small
Signal Schottky Diode Designed for
UHF/VHF Mixers, and Video Detector
Applications. Color Band Indicates
Cathode.
MAXIMUM RATINGS
I
V
P
DISS
T
J
T
STG
T
SOLD
10 mA
4.0 V
100 mW @ T
A
= 25 °C
-60 °C to +150 °C
-60 °C to +150 °C
t = 5.0 Sec. +260 °C
CHARACTERISTICS
SYMBOL
V
R
C
J0
T
SS
R
V
γ
I
R
= 10
µA
V
R
= 0 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM
4.0
f = 1.0 MHz
TYPICAL MAXIMUM
UNITS
V
1.0
-55
1.2
5.0
1.6
pF
dBm
KΩ
mV/µW
µ
f = 10 GHz
P = -40 dBm
P = -40 dBm
R
L
= 100 KΩ
R
L
= 100 KΩ
f = 10 GHz
f = 10 GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
Specifications are subject to change without
ti
REV. A
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