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FX608TL

Description
Power Field-Effect Transistor, 2A I(D), 12V, 0.4ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size55KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

FX608TL Overview

Power Field-Effect Transistor, 2A I(D), 12V, 0.4ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

FX608TL Parametric

Parameter NameAttribute value
Objectid1454193466
package instructionFLATPACK, R-PDFP-F6
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Shell connectionDRAIN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDFP-F6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLATPACK
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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