256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 Unbuffered SODIMM Ordering Information
Part Number
M470T3354CZ0-C(L)D6/E6/D5/CC
M470T6554CZ0-C(L)D6/E6/D5/CC
M470T2953CZ0-C(L)D6/E6/D5/CC
DDR2 SDRAM
Number of
Rank
1
2
2
Density
256MB
512MB
1GB
Organization
32Mx64
64Mx64
128Mx64
Component Composition
32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*4
32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*8
64Mx8(K4T51083QC-C(L)D6/E6/D5/CC)*16
Height
30mm
30mm
30mm
Note: “Z” of Part number stand for Lead-free products.
Features
• Performance range
D6(DDR2-667)
Speed@CL3
Speed@CL4
Speed@CL5
CL-tRCD-tRP
400
667
667
4-4-4
E6(DDR2-667)
400
533
667
5-5-5
D5(DDR2-533)
400
533
533
4-4-4
CC(DDR2-400)
400
400
-
3-3-3
Unit
Mbps
Mbps
Mbps
CK
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz f
CK
for 400Mb/sec/pin, 267MHz f
CK
for 533Mb/sec/pin, 333MHz f
CK
for 667Mb/sec/pin
• 4 independent internal banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• Average Refesh Period 7.8us at lower a T
CASE
85°C, 3.9us at 85°C < T
CASE
< 95
°C
- support
High Temperature Self-Refresh rate enable feature
• Package: 60ball FBGA - 128Mx4/64Mx8 , 84ball FBGA 32Mx16
-
RoHS Compliant
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
Address Configuration
Organization
64Mx8(512Mb)
based Module
32Mx16(512Mb)
based Module
Row Address
A0-A13
A0-A12
Column Address
A0-A9
A0-A9
Bank Address
BA0-BA1
BA0-BA1
Auto Precharge
A10
A10
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
Pin Configurations (Front side/Back side)
Pin
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
DDR2 SDRAM
Back
A0
V
DD
BA1
RAS
S0
V
DD
ODT0
A13
V
DD
NC
V
SS
DQ36
DQ37
V
SS
DM4
V
SS
DQ38
DQ39
V
SS
DQ44
DQ45
V
SS
DQS5
DQS5
V
SS
Front
V
REF
V
SS
DQ0
DQ1
V
SS
DQS0
DQS0
V
SS
DQ2
DQ3
V
SS
DQ8
DQ9
V
SS
DQS1
DQS1
V
SS
DQ10
DQ11
V
SS
V
SS
DQ16
DQ17
V
SS
DQS2
Pin
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
Back
V
SS
DQ4
DQ5
V
SS
DM0
V
SS
DQ6
DQ7
V
SS
DQ12
DQ13
V
SS
DM1
V
SS
CK0
CK0
V
SS
DQ14
DQ15
V
SS
V
SS
DQ20
DQ21
V
SS
NC
Pin
51
53
55
57
59
61
63
65
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
97
99
Front
DQS2
V
SS
DQ18
DQ19
V
SS
DQ24
DQ25
V
SS
DM3
NC
V
SS
DQ26
DQ27
V
SS
CKE0
V
DD
NC
BA2
V
DD
A12
A9
A8
V
DD
A5
A3
Pin
52
54
56
58
60
62
64
66
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
100
Back
DM2
V
SS
DQ22
DQ23
V
SS
DQ28
DQ29
V
SS
DQS3
DQS3
V
SS
DQ30
DQ31
V
SS
NC/CKE1
V
DD
NC
NC
V
DD
A11
A7
A6
V
DD
A4
A2
Pin
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
145
147
149
Front
A1
V
DD
A10/AP
BA0
WE
V
DD
CAS
NC/S1
V
DD
NC/ODT1
V
SS
DQ32
DQ33
V
SS
DQS4
DQS4
V
SS
DQ34
DQ35
V
SS
DQ40
DQ41
V
SS
DM5
V
SS
Pin
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
146
148
150
Pin
151
153
155
157
159
161
163
165
167
169
171
173
175
177
179
181
183
185
187
189
191
193
195
197
199
Front
DQ42
DQ43
V
SS
DQ48
DQ49
V
SS
NC, TEST
V
SS
DQS6
DQS6
V
SS
DQ50
DQ51
V
SS
DQ56
DQ57
V
SS
DM7
V
SS
DQ58
DQ59
V
SS
SDA
SCL
V
DD
SPD
Pin
152
154
156
158
160
162
164
166
168
170
172
174
176
178
180
182
184
186
188
190
192
194
196
198
200
Back
DQ46
DQ47
V
SS
DQ52
DQ53
V
SS
CK1
CK1
V
SS
DM6
V
SS
DQ54
DQ55
V
SS
DQ60
DQ61
V
SS
DQS7
DQS7
V
SS
DQ62
DQ63
V
SS
SA0
SA1
Note :
NC = No Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Pin Description
Pin Name
CK0,CK1
CK0,CK1
CKE0,CKE1
RAS
CAS
WE
S0,S1
A0~A9, A11~A13
A10/AP
BA0,BA1
ODT0,ODT1
SCL
Function
Clock Inputs, positive line
Clock Inputs, negative line
Clock Enables
Row Address Strobe
Column Address Strobe
Write Enable
Chip Selects
Address Inputs
Address Input/Autoprecharge
SDRAM Bank Address
On-die termination control
Serial Presence Detect(SPD) Clock Input
Pin Name
SDA
SA1,SA0
DQ0~DQ63
DM0~DM7
DQS0~DQS7
DQS0~DQS7
TEST
V
DD
V
SS
V
REF
V
DD
SPD
NC
SPD address
Data Input/Output
Data Masks
Data strobes
Function
SPD Data Input/Output
Data strobes complement
Logic Analyzer specific test pin (No connect on
So-DIMM)
Core and I/O Power
Ground
Input/Output Reference
SPD Power
Spare pins, No connect
Rev. 1.1 Mar. 2005
256MB, 512MB, 1GB Unbuffered SODIMMs
Input/Output Functional Description
Symbol
CK0-CK1
CK0-CK1
Type
Input
Function
DDR2 SDRAM
The system clock inputs. All address and command lines are sampled on the cross point of the rising edge
of CK and falling edge of CK . A Delay Locked Loop (DLL) circuit is driven from the clock input and output
timing for read operations is synchronized to the input clock.
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low, By deactivat-
ing the clocks, CKE low initiates the Power Down mode or the Self Refesh mode.
Enables the associated DDR2 SDRAM command decoder when low and disables the command decoder
when high. When the command decoder is disabled, new commands are ignored but previous operations
continue. Rank 0 is selected by S0, Rank 1 is selected by S1. Ranks are also called “Physical banks”.
When sampled at the cross point of the rising edge of CK and falling edge of CK, CAS, RAS, and WE
define the operation to be executed by the SDRAM.
Selects which DDR2 SDRAM internal bank is activated.
Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR2 SDRAM Extended
Mode Register Set (EMRS).
During a Bank Activate command cycle, defines the row address when sampled at the cross point of the
rising edge of CK and falling edge of CK. During a Read or Write command cycle, defines the column
address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the
column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle.
If AP is high, autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low,
autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-BAn
to control which bank(s) to precharge. If AP is high, all banks will be pecharged regardiess of the state of
BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.
Data Input/Output pins.
The data write masks, associated with one data byte. In Write mode, DM operates as a byte
mask by allowing input data to be written if it is low but blocks the write operation if it is high. In
Read mode, DM lines have no effect.
The data strobes, associated with one data byte, sourced with data transfers. In Write mode,
the data strobe is sourced by the controller and is centered in the data window. In Read mode,
the data strobe is sourced by the DDR2 SDRAMs and is sent at the leading edge of the data
window. DQS signals are complements, and timing is relative to the crosspoint of respective
DQS and DQS If the module is to be operated in single ended strobe mode, all DQS signals
must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately.
Power supplies for core, I/O, Serial Presence Detect, and ground for the module.
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resistor must be con-
nected to V
DD
to act as a pull up.
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from SCL
to V
DD
to act as a pull up.
Address pins used to select the Serial Presence Detect base address.
The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules(SO-
DIMMs).
CKE0-CKE1
Input
S0-S1
Input
RAS, CAS, WE
BA0~BA1
ODT0~ODT1
Input
Input
Input
A0~A9,
A10/AP,
A11~A13
Input
DQ0~DQ63
In/Out
DM0~DM7
Input
DQS0~DQS7
DQS0~DQS7
In/Out
V
DD
,V
DD
SPD,V
SS
SDA
Supply
In/Out
SCL
SA0~SA1
TEST
Input
Input
In/Out
Rev. 1.1 Mar. 2005