M470T3354CZ0-CE6 datasheet, PDF

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M470T3354CZ0-CE6: DescriptionDDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC; Categorystorage storage; File Size329KB，18 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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M470T3354CZ0-CE6 Overview

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC

M470T3354CZ0-CE6 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	SODIMM
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	compli
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
JESD-30 code	R-XZMA-N200
memory density	2147483648 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Humidity sensitivity level	2
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum slew rate	1.2 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	OTHER
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	40
Base Number Matches	1

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256MB, 512MB, 1GB Unbuffered SODIMMs

DDR2 SDRAM

DDR2 Unbuffered SODIMM

200pin Unbuffered SODIMM based on 512Mb C-die

64bit Non-ECC

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure couldresult in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.2 Aug. 2005

256MB, 512MB, 1GB Unbuffered SODIMMs

Input/Output Functional Description

Symbol

CK0-CK1

CKE0-CKE1

Type

Input

Function

DDR2 SDRAM

The system clock inputs. All address and command lines are sampled on the cross point of the rising edge of CK and fall-

ing edge of CK . A Delay Locked Loop (DLL) circuit is driven from the clock input and output timing for read operations is

synchronized to the input clock.

Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low, By deactivating the clocks,

CKE low initiates the Power Down mode or the Self Refesh mode.

Enables the associated DDR2 SDRAM command decoder when low and disables the command decoder when high.

When the command decoder is disabled, new commands are ignored but previous operations continue. Rank 0 is selected

by S0, Rank 1 is selected by S1. Ranks are also called “Physical banks”.

When sampled at the cross point of the rising edge of CK and falling edge of CK, CAS, RAS, and WE define the operation

to be executed by the SDRAM.

Selects which DDR2 SDRAM internal bank is activated.

Asserts on-die termination for DQ, DM, DQS, and DQS signals if enabled via the DDR2 SDRAM Extended Mode Register

Set (EMRS).

During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of CK

and falling edge of CK. During a Read or Write command cycle, defines the column address when sampled at the cross

point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used to invoke autopre-

charge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines

the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in con-

junction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pecharged regardiess of the

state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.

Data Input/Output pins.

The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask by allowing input data to

be written if it is low but blocks the write operation if it is high. In Read mode, DM lines have no effect.

The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe is sourced by

the controller and is centered in the data window. In Read mode, the data strobe is sourced by the DDR2 SDRAMs and is

sent at the leading edge of the data window. DQS signals are complements, and timing is relative to the crosspoint of

respective DQS and DQS If the module is to be operated in single ended strobe mode, all DQS signals must be tied on the

system board to VSS and DDR2 SDRAM mode registers programmed appropriately.

Power supplies for core, I/O, Serial Presence Detect, and ground for the module.

This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resistor must be connected to V

to act

as a pull up.

This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from SCL to V

to act as

a pull up.

Address pins used to select the Serial Presence Detect base address.

The TEST pin is reserved for bus analysis tools and is not connected on normal memory modules(SO-DIMMs).

Input

S0-S1

Input

RAS, CAS, WE

BA0~BA1

ODT0~ODT1

Input

A0~A9,

A10/AP,

A11~A13

Input

DQ0~DQ63

DM0~DM7

In/Out

Input

DQS0~DQS7

In/Out

SPD,V

SDA

SCL

SA0~SA1

TEST

Supply

In/Out

Input

In/Out

Rev. 1.2 Aug. 2005

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