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BD137-10-BP-HF

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size381KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

BD137-10-BP-HF Overview

Power Bipolar Transistor,

BD137-10-BP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Reach Compliance Codenot_compliant
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
)HDWXUHV
available upon request by adding suffix "-HF"
Halogen
free
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BD135-6/10/16
BD137-6/10/16
BD139-6/10/16

0D[LPXP5DWLQJV
Rating
Collector-Emitter Voltage
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
DC Current Gain - h
FE
= 40 (Min) @I
C
= 150mAdc
Complementary with BD136, BD138, BD140
Symbol
BD135
BD137
BD139
V
CEO
Value
45
60
80
45
60
80
5.0
1.5
0.5
1.25
10
12.5
100
-55 to +150
10
100
Unit
Vdc
Power Transistors
NPN Silicon
45,60,80 Volts

A
K
N
Collector-Base Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @T
A
=25
Derate above 25
Total Device Dissipation @T
C
=25
Derate above 25
Operating & Storage Temperature Range
Maximum Thermal Resistance Junction to
Case
Maximum Thermal Resistance Junction to
Ambient Air
V
CBO
V
EBO
I
C
I
B
P
D
P
D
T
J
, T
STG
R

-&
R

-$
Vdc
Vdc
Adc
Adc
Watt
mW/
Watt
mW/
E
D

B
M
:
:
:
:
:
:
/W
:
/W
:
:

1
2
3
L
G



(OHFWULFDO &KDUDFWHULVWLFV # 
°
& 8QOHVV 2WKHUZLVH 6SHFLILHG
Symbol
Parameter
Collector-Emitter Sustaining Voltage*
(I
C
=30mA,I
B
=0) BD135
BD137
BD139
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
(V
CB
=30Vdc, I
E
=0, T
C
=125 )
Emitter Cutoff Current
(V
BE
=5.0Vdc, I
C
=0)
DC Current Gain*
(I
C
=5mAdc, V
CE
=2Vdc)
(I
C
=0.5Adc, V
CE
=2Vdc)
(I
C
=150mAdc, V
CE
=2Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter ON Voltage
(V
CE
=2V, I
C=
0.5A)
Min
Max
Units
Vdc
45
60
80
0.1
10
10
µAdc
µAdc
C
2)) &+$5$&7(5,67,&6
BV
CEO
I
CBO
F
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
Q
EMITTER
COLLECTOR
BASE
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(on)
:
J
25
25
40
250
0.5
1
Vdc
Vdc
CLASSIFICATION OF H
FE(3)
Rank
Range
6
40-
100
10
63- 160
16
100-
250










L
M
N
Q
 

0.291
0.417
0.602
4
0.118
0.026
0.046
0.090TYP
0.098
0.083
0.000
0.043
0.018




0.307
0.433
0.618
1
0.126
0.034
0.054
0.114
0.091
0.012
0.059
0.024






7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Notes: 1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
www.mccsemi.com
1 of 3
Revision:
C
2014/01/02

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