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BST86TRL

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 180V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerYAGEO
Websitehttp://www.yageo.com/
Download Datasheet Parametric View All

BST86TRL Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 180V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BST86TRL Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage180 V
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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