AM29LV065DU121RWHEB datasheet, PDF

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AM29LV065DU121RWHEB: DescriptionFlash, 8MX8, 120ns, PBGA63, 11 X 12 MM, 0.80 MM PITCH, FBGA-63; Categorystorage storage; File Size977KB，50 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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AM29LV065DU121RWHEB Overview

Flash, 8MX8, 120ns, PBGA63, 11 X 12 MM, 0.80 MM PITCH, FBGA-63

AM29LV065DU121RWHEB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	BGA
package instruction	11 X 12 MM, 0.80 MM PITCH, FBGA-63
Contacts	63
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	120 ns
startup block	BOTTOM/TOP
JESD-30 code	R-PBGA-B63
JESD-609 code	e0
length	12 mm
memory density	67108864 bit
Memory IC Type	FLASH
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	63
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
type	NOR TYPE
width	11 mm
Base Number Matches	1

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ADVANCE INFORMATION

Am29LV065D

64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only

Uniform Sector Flash Memory with VersatileI/O™ Control

DISTINCTIVE CHARACTERISTICS

Single power supply operation

— 3.0 to 3.6 volt read, erase, and program operations

VersatileI/O™ control

— Device generates data output voltages and tolerates

data input voltages as determined by the voltage on

the V

High performance

— Access times as fast as 90 ns

Manufactured on 0.23 µm process technology

CFI (Common Flash Interface) compliant

— Provides device-specific information to the system,

allowing host software to easily reconfigure for

different Flash devices

SecSi™ (Secured Silicon) Sector region

— 256-byte sector for permanent, secure identification

through an 16-byte random Electronic Serial Number

— May be programmed and locked at the factory or by

the customer

— Accessible through a command sequence

Ultra low power consumption (typical values at 3.0 V,

5 MHz)

— 9 mA typical active read current

— 26 mA typical erase/program current

— 200 nA typical standby mode current

Flexible sector architecture

— One hundred twenty-eight 64 Kbyte sectors

Sector Protection

— A hardware method to lock a sector to prevent

program or erase operations within that sector

— Sectors can be locked in-system or via programming

equipment

— Temporary Sector Unprotect feature allows code

changes in previously locked sectors

Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically writes

and verifies data at specified addresses

Compatibility with JEDEC standards

— Pinout and software compatible with single-power

supply Flash

— Superior inadvertent write protection

Minimum 1 million erase cycle guarantee per sector

Package options

— 48-pin TSOP

— 63-ball FBGA

Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or

program data to, a sector that is not being erased,

then resumes the erase operation

Data# Polling and toggle bits

— Provides a software method of detecting program or

erase operation completion

Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or

erase cycle completion

Hardware reset pin (RESET#)

— Hardware method to reset the device for reading array

data

ACC pin

— Accelerates programming time for higher throughput

during system production

Program and Erase Performance (V

not applied to

the ACC input pin)

— Byte program time: 5 µs typical

— Sector erase time: 1.6 s typical for each 64 Kbyte

sector

20-year data retention at 125°C

— Reliable operation for the life of the system

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice. 8/15/00

Publication#

23544

Rev:

Amendment/+2

Issue Date:

August 14, 2000

Refer to AMD’s Website (www.amd.com) for the latest information.

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