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MT41K512M8RH-125AAT:E

Description
DDR DRAM, 512MX8, CMOS, PBGA78, 9 X 10.50 MM, LEAD FREE, FBGA-78
Categorystorage    storage   
File Size16MB,211 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT41K512M8RH-125AAT:E Overview

DDR DRAM, 512MX8, CMOS, PBGA78, 9 X 10.50 MM, LEAD FREE, FBGA-78

MT41K512M8RH-125AAT:E Parametric

Parameter NameAttribute value
MakerMicron Technology
package instructionTFBGA,
Reach Compliance Codecompliant
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B78
length10.5 mm
memory density4294967296 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals78
word count536870912 words
character code512000000
Operating modeSYNCHRONOUS
organize512MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Filter levelAEC-Q100
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)1.45 V
Minimum supply voltage (Vsup)1.283 V
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width9 mm
Base Number Matches1
4Gb: x8, x16 Automotive DDR3L SDRAM
Description
Automotive DDR3L SDRAM
MT41K512M8 – 64 Meg x 8 x 8 banks
MT41K256M16 – 32 Meg x 16 x 8 banks
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V)
SDRAM data sheet specifications when running in
1.5V compatible mode.
Self refresh temperature (SRT)
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
AEC-Q100
PPAP submission
8D response time
Features
• V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
• Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
– Supports DDR3L devices to be backward com-
patible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T
C
of –40°C to +105°C
– 64ms, 8192-cycle refresh at –40°C to +85°C
– 32ms at +85°C to +105°C
Options
• Configuration
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x8
– 78-ball (10.5mm x 12mm) Rev. D
– 78-ball (9mm x 10.5mm) Rev. E
• FBGA package (Pb-free) – x16
– 96-ball (10mm x 14mm) Rev. D
– 96-ball (9mm x 14mm) Rev. E
• Timing – cycle time
– 1.071ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.875ns @ CL = 7 (DDR3-1066)
• Product certification
– Automotive
• Operating temperature
– Industrial (–40°C
T
C
+95°C)
– Automotive (–40°C
T
C
+105°C)
• Revision
Marking
512M8
256M16
RA
RH
RE
HA
-107
-125
-15E
-187E
A
IT
AT
:D/:E
Table 1: Key Timing Parameters
Speed Grade
-107
1, 2, 3
-125
1, 2
-15E
1
-187E
Notes:
Data Rate (MT/s)
1866
1600
1333
1066
Target
t
RCD-
t
RP-CL
13-13-13
11-11-11
9-9-9
7-7-7
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
PDF: 09005aef8537e66f
4Gb_auto_DDR3L.pdf - Rev. C 2/14 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.

MT41K512M8RH-125AAT:E Related Products

MT41K512M8RH-125AAT:E MT41K512M8RH-125AIT:E MT41K256M16HA-107AAT:E
Description DDR DRAM, 512MX8, CMOS, PBGA78, 9 X 10.50 MM, LEAD FREE, FBGA-78 DDR DRAM, 512MX8, CMOS, PBGA78, 9 X 10.50 MM, LEAD FREE, FBGA-78 DDR DRAM, 256MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96
Maker Micron Technology Micron Technology Micron Technology
package instruction TFBGA, TFBGA, 9 X 14 MM, LEAD FREE, FBGA-96
Reach Compliance Code compliant compliant unknown
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PBGA-B78 R-PBGA-B78 R-PBGA-B96
length 10.5 mm 10.5 mm 14 mm
memory density 4294967296 bit 4294967296 bit 4294967296 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM
memory width 8 8 16
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 78 78 96
word count 536870912 words 536870912 words 268435456 words
character code 512000000 512000000 256000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 512MX8 512MX8 256MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Filter level AEC-Q100 AEC-Q100 AEC-Q100
Maximum seat height 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES
Maximum supply voltage (Vsup) 1.45 V 1.45 V 1.45 V
Minimum supply voltage (Vsup) 1.283 V 1.283 V 1.283 V
Nominal supply voltage (Vsup) 1.35 V 1.35 V 1.35 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Terminal form BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM
width 9 mm 9 mm 9 mm
Base Number Matches 1 1 -
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