BAV23S
BAV23S
3
Connection Diagram
3
3
2
1
L30
1
2
1
2
SOT-23
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
250
200
9.0
3.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
t
rr
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Test Conditions
I
R
= 100
µA
I
F
= 100 mA
I
F
= 200 mA
V
R
= 250 V
V
R
= 250 V, T
A
= 150°C
I
F
= I
R
= 30 mA, I
RR
= 3.0 mA,
R
L
= 100
Ω
Min
250
Max
1.0
1.25
100
100
50
Units
V
V
V
nA
µA
ns
2000
Fairchild Semiconductor Corporation
BAV23S, Rev. C
BAV23S
Small Signal Diode
(continued)
Typical Characteristics
150
Reverse Voltage, V
R
[v]
140
130
Reverse Current, I
R
[nA]
Ta= 25°C
300
Ta= 25°C
250
200
150
100
50
0
10
20
30
50
Reverse Voltage, V
R
[v]
70
100
120
R
110
1
2
3
5
10
20 30
Reverse Current, I
R
[uA]
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Forward Voltage, V
F
[mV]
Forward Voltage, V
F
[mV]
F
485
Ta= 25°C
450
400
350
300
250
225
1
2
3
F
725
Ta= 25°C
700
650
600
550
500
450
0.1
F
5
10
20 30
Forward Current, I
F
[uA]
50
100
0.2 0.3 0.5
1
2
3
Forward Current, I
F
[mA]
5
10
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.5
Total Capacitance, C
T
[pF]
30
50
100
200 300
Forward Current, I
F
[mA]
500
Forward Voltage, V
F
[V]
1.4
1.2
1
0.8
Ta= 25°C
1.3
Ta= 25
°
C
1.2
1.1
F
0.6
10
20
1
0
2
4
6
8
10
Reverse Voltage [V]
12
14
15
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
Figure 6. Total Capacitance
BAV23S, Rev. C
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E
2
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®
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®
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support device or system whose failure to perform can
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failure to perform when properly used in accordance
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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