UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Diodes Incorporated |
| package instruction | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.05 A |
| Collector-based maximum capacity | 1.7 pF |
| Collector-emitter maximum voltage | 15 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.2 W |
| Minimum power gain (Gp) | 15 dB |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 600 MHz |
| Base Number Matches | 1 |
| 2N918 | |
|---|---|
| Description | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| Is it Rohs certified? | incompatible |
| Maker | Diodes Incorporated |
| package instruction | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.05 A |
| Collector-based maximum capacity | 1.7 pF |
| Collector-emitter maximum voltage | 15 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.2 W |
| Minimum power gain (Gp) | 15 dB |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 600 MHz |
| Base Number Matches | 1 |
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