TO-126 Plastic-Encapsulate Transistors
3DD13003
FEATURES
1.BASE
TRANSISTOR ( NPN )
TO-126
·
High total power disspation.(p
c
=1.25w)
2.COLLECTOR
3.EMITTER
123
MAXIMUM RATINGS* T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Value
700
400
9
1.5
1.25
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
V
CE
(sat)
V
BE
(sat)
V
BE
f
T
t
f
t
s
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
unless
Test
otherwise
specified)
MIN
700
400
9
1000
500
1000
8
5
1
1.2
3
5
0.5
2.5
V
V
V
MHz
µs
µs
40
TYP
MAX
UNIT
V
V
V
µA
µA
µA
conditions
Ic= 1000uA, I
E
=0
Ic= 10 mA,
I
E
= 1mA,
I
B
=0
I
C
=0
V
CB
= 700V , I
E
=0
V
CE
= 400V,
V
EB
= 9 V,
B
=0
I
C
=0
V
CE
= 5 V, I
C
= 0.5 A
V
CE
= 5 V, I
C
= 1.5 A
I
C
=1000mA,I
B
= 250 mA
I
C
=1000mA, I
B
= 250mA
I
E
= 2000 mA
V
CE
=10V,Ic=100mA
f =1MHz
I
C
=1A,
I
B1
=-I
B2
=0.2A
V
CC
=100V
Embedded System
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