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3SMC51ATR13

Description
Trans Voltage Suppressor Diode, 3000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size658KB,3 Pages
ManufacturerCentral Semiconductor
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3SMC51ATR13 Overview

Trans Voltage Suppressor Diode, 3000W, 51V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, SMC, 2 PIN

3SMC51ATR13 Parametric

Parameter NameAttribute value
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage65.2 V
Minimum breakdown voltage56.7 V
Breakdown voltage nominal value60.95 V
Maximum clamping voltage82.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage51 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
3SMC5.0A
THRU
3SMC170A
SURFACE MOUNT
UNI-DIRECTIONAL
GLASS PASSIVATED JUNCTION
SILICON TRANSIENT
VOLTAGE SUPPRESSOR
3000 WATTS, 5.0 THRU 170 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3SMC5.0A Series
types are Surface Mount Uni-Directional Glass Passivated
Junction Transient Voltage Suppressors designed to
protect voltage sensitive components from high voltage
transients.
THIS DEVICE IS MANUFACTURED WITH A GLASS
PASSIVATED CHIP FOR OPTIMUM RELIABILITY.
Note: For Bi-directional devices, please refer to the
3SMC5.0CA Series data sheet.
SMC CASE
• This series is UL listed, UL file number E130224
MARKING CODE: SEE ELECTRICAL
CHARACTERISTICS TABLE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Peak Power Dissipation (Note 1)
Peak Forward Surge Current (JEDEC Method)
Operating and Storage Junction Temperature
SYMBOL
PDM
IFSM
TJ, Tstg
3000
200
-65 to +150
UNITS
W
A
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
REVERSE
STAND-OFF
VOLTAGE
VRWM
(V)
3SMC5.0A
3SMC6.0A
3SMC6.5A
3SMC7.0A
3SMC7.5A
3SMC8.0A
3SMC8.5A
3SMC9.0A
3SMC10A
3SMC11A
3SMC12A
3SMC13A
3SMC14A
3SMC15A
3SMC16A
3SMC17A
3SMC18A
3SMC20A
3SMC22A
3SMC24A
3SMC26A
3SMC28A
3SMC30A
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
BREAKDOWN
VOLTAGE
VBR @
MIN
(V)
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
IT
MAX
(V)
7.25
7.67
8.30
8.95
9.58
10.23
10.82
11.5
12.8
14.0
15.3
16.5
17.9
19.2
20.5
21.7
23.3
25.5
28.0
30.7
33.2
35.8
38.3
IT
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
TEST
CURRENT
MAXIMUM
REVERSE
LEAKAGE
CURRENT
@ VRWM
IR
(µA)
1000
1000
500
200
100
50
25
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MAXIMUM
CLAMPING
VOLTAGE
@ IPP
VC
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
PEAK
PULSE
CURRENT
(Note 1)
IPP
(A)
326.0
291.3
267.9
250.0
232.6
220.6
208.4
194.8
176.4
184.8
150.6
139.4
129.4
123.0
115.4
106.6
102.8
92.6
84.4
77.2
71.2
66.0
62.0
CHDE
CHDG
CHDK
CHDM
CHDP
CHDR
CHDT
CHDV
CHDX
CHDZ
CHEE
CHEG
CHEK
CHEM
CHEP
CHER
CHET
CHEV
CHEX
CHEZ
CHFE
CHFG
CHFK
TYPE
MARKING
CODE
Notes: (1) Non-repetitive 10x1,000µs pulse
R8 (20-November 2009)
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