NCV7510
FlexMOSt Programmable
Peak and Hold PWM
MOSFET Predriver
The NCV7510 high side MOSFET predriver is a fully
programmable automotive grade product for driving solenoids or
other unipolar actuators. The product is optimized for common−rail
diesel fuel injection applications and includes an additional
synchronous clamp MOSFET predriver. Peak and hold currents, peak
dwell time and other features are programmable via the device’s SPI
port. Load current is continuously sampled and compared to the
programmable 7−bit peak/hold DAC values while the load
self−modulates to maintain the desired currents at each of the peak and
hold points. Passive fault diagnostics monitor and protect the
MOSFETs when a fault is detected. Fault data is available via SPI and
an open−drain FAULT output provides immediate fault notification to
a host controller.
The FlexMOS family of products offers application scalability
through choice of external MOSFETs.
Features
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MARKING DIAGRAM
20
20
1
SO−20L
DW SUFFIX
CASE 751D
A
WL
YY
WW
NCV7510
AWLYYWW
1
= Assembly Location
= Wafer Lot
= Year
= Work Week
•
•
•
•
•
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4 MHz 16−Bit SPI Communication
3.3 / 5.0 V Compatible Inputs
Bootstrap for High Side MOSFET
Synchronous Clamp Drive
Cross Conduction Suppression
Self−Protection
−
Overcurrent and Overvoltage
−
Antisaturation
Fault Diagnostics
−
Short to Battery/GND
−
Open Circuit / Shorted Load
−
Overvoltage
Open−Drain FAULT Output
Programmable
−
Peak / Hold Current PWM Thresholds
−
Overcurrent and Overvoltage
−
Antisaturation Thresholds
−
Peak Dwell Time
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Scalable by Choice of MOSFETs
Reduced Load Power Consumption
Low Host Controller Overhead
Low Standby Current
PIN CONNECTIONS
1
ENA
CONTROL
PCLK
CSB
SCLK
SI
SO
LOOP
FAULT
OCP
20
V
B
DRN
GATE
SRC
CLAMP
PGND
SNS+
SNS−
DGND
V
DD
ORDERING INFORMATION
Device
NCV7510DW
NCV7510DWR2
Package
SO−20L
SO−20L
Shipping
†
37 Units/Rail
1000 Tape & Reel
Benefits
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
January, 2005 − Rev. 0
Publication Order Number
NCV7510/D
NCV7510
Pin Function Descriptions
ENA:
CMOS input with hysteresis logically ANDed with
the CONTROL input to command the predriver outputs.
This input has an active pulldown current source.
CONTROL:
CMOS input with hysteresis logically ANDed
with the ENA input to command the predriver outputs. This
input has an active pulldown current source.
PCLK:
Buffered CMOS input with hysteresis. This input
controls which DAC register pair is selected for load current
comparison. The input is programmed via Auxiliary register
($01) bit D
3
to respond to a clock signal (AUX D
3
=0 default
at POR) or a logic level (AUX D
3
=1.) The pin presents a
12 pF maximum load to the controller.
CSB:
CMOS input with hysteresis. This input is the
active−low chip select input that enables serial data transfer
between the host controller and the device. This input has an
active pullup current source.
SCLK:
Buffered CMOS input with hysteresis. This input
is the synchronizing clock input for serial data transfer
between the micro controller and the device. The pin
presents a 12 pF maximum load to the controller.
SI:
Buffered CMOS input with hysteresis. This pin is the
data input to the device’s SPI shift register. Serial data
received at this input is transferred from the host controller
to the shift register under the control of the CSB and SCLK
inputs. The pin presents a 12 pF maximum load to the
controller. This input has an active pulldown current source.
SO:
The CMOS compatible line driver at this pin is the data
output from the device’s SPI shift register. Serial data
transmitted at this output is transferred from the shift register
to the host controller under the control of the CSB and SCLK
inputs. The pin is capable of driving 200 pF at 4 MHz and
is HI−Z when the CSB input is high.
LOOP:
The CMOS compatible driver at this pin reflects the
state of the control loop. A logic low indicates that load
current is less than the programmed DAC reference.
FAULT:
An open−drain low voltage NMOS output at this
pin provides immediate fault indication to a connected host
controller. An external resistor is normally connected
between this pin and V
DD
.
DGND:
Device substrate voltage and V
DD
return path for
mixed signal functions. This pin is the circuit common
reference point.
OCP:
This analog comparator input supplies a reference
voltage to the device’s overcurrent fault detection. When the
voltage at this pin is less than 4.5 V, the applied voltage is the
overcurrent reference voltage. When the voltage is greater
than 4.5 V, an internal 3.0 V overcurrent reference is used.
The voltage at this pin must not exceed V
DD
. Applying
approximately V
DD
+ 1.4 V will place the NCV7510 in test
mode and suspend normal operation. The user is advised to
avoid activating the test mode.
V
DD
:
+5.0 Vpower supply input. The voltage at this pin
initiates power−on reset, supplies power to internal
mixed−signal functions and supplies gate charge to the
external CLAMP MOSFET. A low ESR external bulk
capacitor connected between V
DD
and PGND is
recommended to supply transient gate charge. Several
internal reference voltages are derived from V
DD
.
SNS−:
The inverting input to the analog current sense
amplifier. This input should be Kelvin connected directly to
the external current sense resistor’s negative terminal.
SNS+:
The noninverting input to the analog current sense
amplifier. This input should be Kelvin connected directly to
the external current sense resistor’s positive terminal.
PGND:
Return path for the GATE and CLAMP predriver
transient currents and the lower input to the CLAMP
antisaturation detection comparator. This pin should be
star−connected to the CLAMP MOSFET’s source and the
external V
DD
bulk charge capacitor’s negative terminal.
CLAMP:
External CLAMP MOSFET predrive output.
This output switches the CLAMP MOSFET’s gate between
V
DD
and PGND.
SRC:
Lower input to the GATE antisaturation detection
comparator and upper input to the CLAMP antisaturation
detector.
GATE:
External HS MOSFET predrive output. This output
switches the HS MOSFET’s gate between V
B
and PGND.
DRN:
Upper input to the GATE antisaturation detection
comparator, overvoltage detection input, and powerup
interlock input. This pin should be connected directly to the
HS MOSFET’s drain terminal.
VB:
Bootstrap or boost input voltage. This input supplies
gate charge to the external HS MOSFET.
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