3KP170B datasheet, PDF - EEWORLD Datasheet

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3KP170B: DescriptionTrans Voltage Suppressor Diode, 3000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size882KB，6 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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3KP170B Overview

Trans Voltage Suppressor Diode, 3000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

3KP170B Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	209 V
Minimum breakdown voltage	189 V
Breakdown voltage nominal value	199 V
Shell connection	ISOLATED
Maximum clamping voltage	275 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Maximum power dissipation	7 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	170 V
surface mount	NO
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	40
Base Number Matches	1

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Axial Leaded – 3000W > 3KP series

Transient Voltage Suppression Diodes

3KP Series

Description

Uni-directional

RoHS

The 3KP Series is designed specifically to protect sensitive

electronic equipment from voltage transients induced by

lightning and other transient voltage events.

Bi-directional

Features

•

= V

@25°C × (1+

x (T

- 25))

(αT: Temperature Coefficient)

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings and Thermal Characteristics

=25°C unless otherwise noted)

Parameter

Peak Pulse Power Dissipation by

10/1000μs Test Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Inifinite Heat Sink at T

=75ºC (Fig. 6)

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 3)

Operating Junction and Storage

Temperature Range

Typical Thermal Resistance Junction

to Lead

Typical Thermal Resistance Junction

to Ambient

Symbol

PPM

FSM

, T

STG

uJL

uJA

Value

3000

300

3.5/5.0

-55 to 150

8.0

Unit

°C

°C/W

• Glass passivated chip

junction in P600 package

• 3000W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

• Excellent clamping

capability

• Typical failure mode is

short from over-specified

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

15kV(Air), 8kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Typical I

less than 2μA

above 12V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375” (9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

flammability classification

94V-O

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Applications

TVS devices are ideal for the protection of I/O interfaces,

bus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated above T

= 25°C per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V

<3.5V for devices of V

200V and V

<5.0V for devices of V

201V.

Functional Diagram

Additional Information

Bi-directional

Datasheet

Resources

Samples

Cathode

Uni-directional

Anode

Specifications are subject to change without notice.

Revised: 01/24/14

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