Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
| Parameter Name | Attribute value |
| Maker | Microsemi |
| Parts packaging code | DIE |
| package instruction | UNCASED CHIP, X-XUUC-N |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 12 A |
| Maximum drain-source on-resistance | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | X-XUUC-N |
| JESD-609 code | e0 |
| Number of components | 1 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | UNSPECIFIED |
| Package shape | UNSPECIFIED |
| Package form | UNCASED CHIP |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |