Other voltages from 0.9 to 6.0 V, in 0.1 V increments, are available. Consult factory for
information.
Representative Block Diagrams
MC33464X−YYATZ
Open Drain Configuration
2
Input
1
Reset
1
Reset
V
ref
V
ref
MC33464X−YYCTZ
Complementary Drive Configuration
2
Input
3
Gnd
X Denotes Package Type
YY Denotes Threshold Voltage
TZ Denotes Taping Type
This device contains 25 active transistors.
3
Gnd
MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise noted.)
Rating
Power Input Supply Voltage
Reset Output Voltage
Symbol
V
in
I
O
Value
0 to 10
Unit
V
V
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
V
O
−0.3
to 10
70
Reset Output Current (Source or Sink)
mA
Power Dissipation and Thermal Characteristics
Maximum Power Dissipation
Case 1212 (SOT−23) N Suffix
Thermal Resistance, Junction−to−Ambient
Maximum Power Dissipation
Case 1213 (SOT−89) H suffix
Thermal Resistance, Junction−to−Ambient
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
P
D
R
θJA
P
D
R
θJA
T
J
T
A
150
667
300
333
+125
mW
°C/W
mW
°C/W
°C
°C
°C
−
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
Á Á
−40
to +85
T
stg
−40
to +125
260°C, 10 s
Lead Temperature (Soldering)
T
solder
http://onsemi.com
2
MC33464
ELECTRICAL CHARACTERISTICS
(For all values T
A
= 25°C (Note 1), unless otherwise noted.)
Characteristic
COMPARATOR
Threshold Voltage
High State Output (V
in
Decreasing)
09 Suffix
20 Suffix
21 Suffix
27 Suffix
30 Suffix
43 Suffix
45 Suffix
48 Suffix
Threshold Hysteresis
09 Suffix
20 Suffix
21 Suffix
27 Suffix
30 Suffix
43 Suffix
45 Suffix
48 Suffix
Symbol
Min
Typ
Max
Unit
V
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
V
IH
0.878
1.95
2.048
2.633
2.925
4.193
4.388
4.680
0.027
0.060
0.063
0.081
0.090
0.129
0.135
0.144
−
0.9
2.0
2.1
2.7
3.0
4.3
4.5
4.8
0.922
2.05
2.152
2.768
3.075
4.407
4.613
4.920
0.063
0.140
0.147
0.189
0.210
0.301
0.315
0.336
−
V
H
V
0.045
0.100
0.105
0.135
0.150
0.215
0.225
0.240
±100
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á Á
Á
Threshold Voltage Temperature Coefficient
T
C
PPM/°C
V
RESET OUTPUT
Output Voltage
High State (Complementary Output: I
source
= 1.0 mA)
Low State (Complementary or Open Drain: I
sink
= 1.0 mA)
Output Sink Current (V
in
= 1.5 V, V
OL
= 0.5 V)
Output Source Current (V
in
= 4.5 V, V
OL
= 2.4 V)
Operating Input Voltage Range
Quiescent Input Current
V
in
= 2.9 V
V
in
= 5.6 V
V
OH
V
OL
I
OL
I
OH
V
in
I
in
V
in
−
2.1
−
1.0
1.0
V
in
−
1.0
0.025
2.0
2.0
−
V
in
0.05
−
−
−
mA
mA
V
TOTAL DEVICE
0.7 to 10
−
−
−
μA
0.9
1.2
−
2.7
3.6
Propagation Delay Time (Note 2)
t
p
100
μs
NOTES:
1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
2. Propagation delay time is measured from the rising or falling edge of the input voltage to the point where the output voltage has transitioned to 50%
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