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2N1293

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size176KB,1 Pages
ManufacturerGPD Optoelectronics Corp
Download Datasheet Parametric Compare View All

2N1293 Overview

Transistor

2N1293 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature85 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

2N1293 Related Products

2N1293 2N1322 2N1291 2N1324 2N1295 2N1320
Description Transistor Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknown unknown unknown unknown unknow unknow
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A
Configuration Single Single Single Single Single Single
Minimum DC current gain (hFE) 40 40 40 40 40 40
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W 20 W 20 W
surface mount NO NO NO NO NO NO
Base Number Matches 1 1 1 1 - -
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