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KM44L32031BT-GY0

Description
DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, TSOP2-66
Categorystorage    storage   
File Size750KB,49 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM44L32031BT-GY0 Overview

DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66, TSOP2-66

KM44L32031BT-GY0 Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionTSOP2,
Reach Compliance Codecompliant
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G66
length22.22 mm
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals66
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX4
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
128Mb DDR SDRAM
Target
DDR SDRAM Specification
Version 0.61
- 1 of 63 -
REV. 0.61 August 9. '99
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