2N5152LJ datasheet, PDF - EEWORLD Datasheet

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2N5152LJ: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3; CategoryDiscrete semiconductor The transistor; File Size458KB，2 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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2N5152LJ Overview

Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3

2N5152LJ Parametric

Parameter Name	Attribute value
Parts packaging code	TO-5
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Guideline	MIL-19500
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	1500 ns
Maximum opening time (tons)	500 ns
Base Number Matches	1

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2N5152L

Silicon NPN Transistor

D a ta S h e e t

Description

EMICOA Corportion

offers:

•

Screening and processing per MIL-PRF-19500

Appendix E

•

JAN level (2N5152LJ)

•

JANTX level (2N5152LJX)

•

JANTXV level (2N5152LJV)

•

JANS level (2N5152LJS)

•

JANSR level (2N5152LJSR)

•

JANSR level (2N5152LJSR)

•

QCI to the applicable level

•

100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

•

Radiation testing (total dose) upon request

Applications

•

High-speed power switching

•

Low power

•

NPN silicon transistor

Features

•

Hermetically sealed TO-5 metal can

Also available in chip configuration

Chip geometry 9701

Reference document:

MIL-PRF-19500/544

Benefits

Please contact S

EMICOA

for special configurations

www.SEMICOA.com or (714) 979-1900

•

Qualification Levels: JAN, JANTX,

JANTXV

JANS

, JANSR and JANSF

•

Radiation testing available

= 25°C unless otherwise specified

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, T

= 25

Derate linearly above 25

Power Dissipation, T

= 25

Derate linearly above 25

Thermal Resistance

Operating Junction Temperature

Storage Temperature

Symbol

CEO

CBO

EBO

Rating

100

5.5

5.7

11.8

66.7

175

-65 to + 200

Unit

Volts

mW/°C

°C/W

°C

θJA

θJC

STG

Rev. D-2

SEMICOA

Corporation

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

2N5152LJ Related Products

	2N5152LJ	2N5152LJSF	2N5152LJV	2N5152LJSR	2N5152LJX	2N5152LJS
Description	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
package instruction	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Base Number Matches	1	1	1	1	1	1
Parts packaging code	TO-5	-	TO-5	-	TO-5	TO-5
Contacts	3	-	3	-	3	3
ECCN code	EAR99	-	EAR99	-	EAR99	EAR99
Maximum collector current (IC)	2 A	-	2 A	-	2 A	2 A
Collector-emitter maximum voltage	80 V	-	80 V	-	80 V	80 V
Configuration	SINGLE	-	SINGLE	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	-	20	-	20	20
JEDEC-95 code	TO-5	-	TO-5	-	TO-5	TO-5
JESD-30 code	O-MBCY-W3	-	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3
Number of components	1	-	1	-	1	1
Number of terminals	3	-	3	-	3	3
Package body material	METAL	-	METAL	-	METAL	METAL
Package shape	ROUND	-	ROUND	-	ROUND	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	-	NPN	-	NPN	NPN
Guideline	MIL-19500	-	MIL-19500	-	MIL-19500	MIL-19500
surface mount	NO	-	NO	-	NO	NO
Terminal form	WIRE	-	WIRE	-	WIRE	WIRE
Terminal location	BOTTOM	-	BOTTOM	-	BOTTOM	BOTTOM
transistor applications	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	-	SILICON	SILICON
Maximum off time (toff)	1500 ns	-	1500 ns	-	1500 ns	1500 ns
Maximum opening time (tons)	500 ns	-	500 ns	-	500 ns	500 ns

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