BZX84CxxxET1 Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
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3
Cathode
1
Anode
•
•
•
•
•
•
•
•
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range
−
2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power
−
225 W (8
X
20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
Pb−Free Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
3
1
2
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
xxx M
G
G
1
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
≤
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina Sub-
strate, (Note 3) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
pk
P
D
Max
225
Unit
W
ORDERING INFORMATION
Device
BZX84CxxxET1
BZX84CxxxET1G
225
1.8
556
300
2.4
417
−65
to
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SZBZX84CxxxET1G
BZX84CxxxET3
BZX84CxxxET3G
SZBZX84CxxxET3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
R
qJA
P
D
10,000 / Tape &
Reel
SOT−23 10,000 / Tape &
(Pb−Free)
Reel
SOT−23 10,000 / Tape &
(Pb−Free)
Reel
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
November, 2011
−
Rev. 7
1
Publication Order Number:
BZX84C2V4ET1/D
BZX84CxxxET1 Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C
unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
R
V
R
I
F
V
F
QV
Z
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
Max. Capacitance @ V
R
= 0 and f = 1 MHz
V
Z
V
R
I
R
V
F
I
ZT
V
I
I
F
Zener Voltage Regulator
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2
BZX84CxxxET1 Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
V
Z1
(V)
@ I
ZT1
= 5 mA
(Note 4)
Device*
BZX84C2V4ET1, G
SZ/BZX84C2V7ET1, G
BZX84C3V0ET1, G
BZX84C3V3ET1, G
BZX84C3V6ET1, G
BZX84C3V9ET1, G
BZX84C4V3ET1, G
BZX84C4V7ET1, G
BZX84C5V1ET1, G
BZX84C5V6ET1, G
SZBZX84C5V6ET3, G
SZ/BZX84C6V2ET1, G
BZX84C6V8ET1, G
BZX84C7V5ET1, G
BZX84C8V2ET1, G
BZX84C9V1ET1, G
BZX84C10ET1, G
BZX84C11ET1, G
BZX84C12ET1, G
BZX84C13ET1, G
BZX84C15ET1, G
BZX84C16ET1, G
BZX84C18ET1, G
BZX84C20ET1, G
BZX84C22ET1, G
BZX84C24ET1, G
Device
Marking
BA1
BA2
BA3
BA4
BA5
BA6
BA7
BA9
BB1
BB2
BB3
BB4
BB5
BB6
BB7
BB8
BB9
BC1
BC2
BC3
BC4
BC5
BC6
BC7
BC8
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
V
Z2
(V)
@ I
ZT2
= 1
mA
(Note 4)
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
15.5
17
19
21.1
23.2
25.5
V
Z3
(V)
@ I
ZT3
=20 mA
(Note 4)
Min
2.6
3.0
3.3
3.6
3.9
4.1
4.4
4.5
5.0
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
Max
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8.0
8.8
9.7
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Max
Reverse
Leakage
Current
V
I
R
@
R
(V)
mA
50
20
10
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14
15.4
16.8
q
VZ
C (pF)
(mV/k)
@
@ I
ZT1
=5 mA
V
R
= 0
f=
Min Max 1 MHz
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
0
0
0
0
0
−2.5
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
11
13
14
16
18
20
22
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
85
80
Z
ZT1
(W)
@ I
ZT1
=
5 mA
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Z
ZT2
(W)
@ I
ZT2
=
1 mA
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Z
ZT3
(W)
@
I
ZT3
=
20 mA
50
50
50
40
40
30
30
15
15
10
6
6
6
6
8
10
10
10
15
20
20
20
20
25
25
V
Z1
Below
@ I
ZT1
= 2 mA
Device
BZX84C27ET1, G
BZX84C30ET1
BZX84C33ET1, G
BZX84C36ET1, G
BZX84C39ET1, G
BZX84C43ET1, G
BZX84C47ET1, G
BZX84C51ET1, G
BZX84C56ET1, G
BZX84C62ET1, G
BZX84C68ET1, G
BZX84C75ET1, G
Device
Marking
BC9
BD1
BD2
BD3
BD4
BK6
BD5
BD6
BD7
BD8
BD9
BE1
Min
25.1
28
31
34
37
40
44
48
52
58
64
70
Nom
27
30
33
36
39
43
47
51
56
62
68
75
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
80
80
90
130
150
170
180
200
215
240
255
V
Z2
Below
@ I
ZT2
=
0.1 mA
Min
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
V
Z3
Below
@ I
ZT3
= 10 mA
Min
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
73.2
80.2
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
50
55
60
70
80
90
100
110
120
130
140
Max
Reverse
Leakage
Current
V
I
R
@
R
(V)
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
q
VZ
(mV/k)
Below
@ I
ZT1
= 2
mA
Min
21.4
24.4
27.4
30.4
33.4
37.6
42
46.6
52.2
58.8
65.6
73.4
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
C (pF)
@ V
R
=0
f=
1 MHz
70
70
70
70
45
40
40
40
40
35
35
35
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C
* The “G” suffix indicates Pb−Free package available.
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3
BZX84CxxxET1 Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
−1
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
TYPICAL T
C
VALUES
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
V
Z
@ I
ZT
10
−2
−3
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
I
Z
= 1 mA
T
J
= 255C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
100
10
150°C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75°C 25°C
0°C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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4
PCB Design
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