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5962-8959818MTC

Description
Standard SRAM, 128KX8, 45ns, CMOS, PDFP32
Categorystorage    storage   
File Size809KB,16 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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5962-8959818MTC Overview

Standard SRAM, 128KX8, 45ns, CMOS, PDFP32

5962-8959818MTC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionQFF, FL32,.5
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time45 ns
I/O typeCOMMON
JESD-30 codeR-PDFP-F32
JESD-609 codee4
length20.825 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFF
Encapsulate equivalent codeFL32,.5
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply5 V
Certification statusQualified
Filter levelMIL-STD-883
Maximum seat height3.18 mm
Maximum standby current0.001 A
Minimum standby current2 V
Maximum slew rate0.115 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
width10.415 mm
Base Number Matches1
Features
Operating Voltage: 5V
Access Time: 30, 45 ns
Very Low Power Consumption
Active: 600 mW (Max)
Standby: 1 µW (Typ)
Wide Temperature Range: -55⋅C to +125⋅C
400 Mils Width Packages: FP32 and SB32
TTL Compatible Inputs and Outputs
Asynchronous
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm
2
@125°C
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
QML Q and V with SMD 5962-89598
ESCC with Specification 9301/047
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six transistors (6T) memory cells, the M65608E combines an
extremely low standby supply current (Typical value = 0.2 µA) with a fast access time
at 30 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of the latest revision of the MIL
PRF 38535 or ESCC 9000.
Rad. Tolerant
128Kx8, 5-Volt
Very Low Power
CMOS SRAM
M65608E
4151P–AERO–11/12
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