Philips Semiconductors
Product specification
Band-switching diode
FEATURES
•
Very small plastic SMD package
•
Low diode capacitance: max. 1.05 pF
•
Low diode forward resistance: max. 0.7
Ω
•
Small inductance.
APPLICATIONS
•
Low loss band-switching in VHF television tuners
•
Surface mount band-switching circuits.
DESCRIPTION
The BA591 is a planar, high performance band-switching
diode in the very small SOD323 (SC-76) SMD plastic
package.
Top view
Marking code:
A1.
The marking bar indicates the cathode.
BA591
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
1
2
sym006
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BA591
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
35
100
500
+150
+150
V
mA
mW
°C
°C
UNIT
2004 Feb 17
2
Philips Semiconductors
Product specification
Band-switching diode
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse current
diode capacitance
V
R
= 20 V
f = 1 MHz; note 1; see Fig.2
V
R
= 1 V
V
R
= 3 V
r
D
diode forward resistance
f = 100 MHz; note 1; see Fig.3
I
F
= 3 mA
I
F
= 10 mA
1/g
p
L
S
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-s)
PARAMETER
thermal resistance from junction to soldering point
VALUE
120
reverse resistance
series inductance
V
R
= 1 V; f = 100 MHz; note 1
0.45
0.36
100
2
0.7
0.5
−
−
0.8
0.65
1.05
0.9
CONDITIONS
I
F
= 10 mA
−
−
TYP.
1
20
BA591
MAX.
V
UNIT
nA
pF
pF
Ω
Ω
kΩ
nH
UNIT
K/W
2004 Feb 17
3
Philips Semiconductors
Product specification
Band-switching diode
GRAPHICAL DATA
BA591
handbook, halfpage
1.6
MGL477
handbook, halfpage
10
MGL476
Cd
(pF)
1.2
rD
(Ω)
0.8
1
0.4
0
0
10
20
VR (V)
30
10
−1
10
−1
1
10
IF (mA)
10
2
T
j
= 25
°C;
f = 1 MHz.
T
j
= 25
°C;
f = 100 MHz.
Fig.2
Diode capacitance as a function of reverse
voltage; typical values.
Fig.3
Diode forward resistance as a function of
forward current; typical values.
2004 Feb 17
4
Philips Semiconductors
Product specification
Band-switching diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BA591
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
03-12-17
2004 Feb 17
5
Analog electronics
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