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BP103B3

Description
Photo Transistor, 850nm, 0.05A I(C)
CategoryLED optoelectronic/LED    photoelectric   
File Size221KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BP103B3 Overview

Photo Transistor, 850nm, 0.05A I(C)

BP103B3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Reach Compliance Codeunknown
JESD-609 codee0
Installation featuresTHROUGH HOLE MOUNT
Maximum on-state current0.05 A
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
peak wavelength850 nm
Maximum power dissipation0.2 W
Maximum response time0.00001 s
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BP103B3 Related Products

BP103B3 BP103BF3 BP103B2 BP103BF4 BP103B4
Description Photo Transistor, 850nm, 0.05A I(C) Photo Transistor, 900nm, 0.05A I(C) Photo Transistor, 850nm, 0.05A I(C) Photo Transistor, 900nm, 0.05A I(C) Photo Transistor, 850nm, 0.05A I(C)
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown unknown
JESD-609 code e0 e0 e0 e0 e0
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Maximum on-state current 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
Maximum operating temperature 100 °C 100 °C 100 °C 100 °C 100 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
peak wavelength 850 nm 900 nm 850 nm 900 nm 850 nm
Maximum power dissipation 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Maximum response time 0.00001 s 0.00001 s 0.0000075 s 0.00001 s 0.00001 s
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1 1 1
Maker Infineon Infineon Infineon Infineon -
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