DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAP64-04
Silicon PIN diode
Preliminary specification
1999 Jun 16
Philips Semiconductors
Preliminary specification
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF attenuators and switches
•
Low diode capacitance
•
Low diode forward resistance
•
Low series inductance
•
For applications up to 3 GHz.
handbook, halfpage
2
BAP64-04
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
1
APPLICATIONS
•
RF attenuators and switches.
DESCRIPTION
Two planar PIN diodes in series configuration in a SOT23
small plastic SMD package.
3
Marking code:
4Kp.
MAM232
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
−
−
−
−65
−65
175
100
250
+150
+150
V
mA
mW
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 Jun 16
2
Philips Semiconductors
Preliminary specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
I
R
forward voltage
reverse leakage current
I
F
= 50 mA
V
R
= 175 V
V
R
= 20 V
V
R
= 0; f = 1 MHz
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 0.5 mA; f = 100 MHz; note 1
r
D
diode forward resistance
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
τ
L
charge carrier life time
−
−
−
−
−
−
−
−
−
−
0.95
−
−
0.52
0.37
0.23
20
10
2
0.7
1.55
PARAMETER
CONDITIONS
MIN.
TYP.
BAP64-04
MAX.
UNIT
1.1
10
1
−
0.5
0.35
40
20
3.8
1.35
−
V
µA
µA
pF
pF
pF
Ω
Ω
Ω
Ω
µs
when switched from I
F
= 10 mA to
−
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
−
L
S
Note
series inductance
1.4
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
220
UNIT
K/W
1999 Jun 16
3
Philips Semiconductors
Preliminary specification
Silicon PIN diode
GRAPHICAL DATA
BAP64-04
100
r
D
(Ω)
600
C
D
(fF)
500
10
400
300
1
200
100
0.1
0.1
1
10
100
I
F
(mA)
0
0
4
8
12
16
V
R
(V)
f = 1 MHz; T
j
= 25
°
C.
20
f = 100 MHz; T
j
= 25
°
C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
0
|S
21
|
(dB)
-1
2
(1)
(3)
(2)
0
|S
21
|
2
(dB)
-5
-10
-2
(4)
-15
-3
-20
-4
-25
-5
0.5
1
1.5
2
2.5
3
f (GHz)
-30
0.5
1
1.5
2
2.5
3
f (GHz)
(1) I
F
= 100 mA.; (2) I
F
= 10 mA.; (3) I
F
= 1 mA.; (4) I
F
= 0.5 mA.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°
C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°
C.
Fig.4
Insertion loss (|S
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|S
21
|
2
) of the diode as a function
of frequency; typical values.
1999 Jun 16
4
Philips Semiconductors
Preliminary specification
Silicon PIN diode
PACKAGE OUTLINE
BAP64-04
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Jun 16
5
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