BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
Rev. 01 — 17 March 2003
Product data
1. Product profile
1.1 Description
Monolithic temperature and overload protected single high-side power switch based
on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic
package.
Product availability:
BUK212-50Y in SOT263B-01
BUK217-50Y in SOT426 (D
2
-PAK).
1.2 Features
s
s
s
s
s
s
s
Very low quiescent current
Power TrenchMOS™
Overtemperature protection
Over and undervoltage protection
Reverse battery protection
Low charge pump noise
Loss of ground protection
s
s
s
s
s
s
s
CMOS logic capability
Negative load clamping
Overload protection
ESD protection for all pins
Diagnostic status indication
Operating voltage down to 5.5 V
Current limitation.
1.3 Applications
s
12 V and 24 V grounded loads
s
Inductive loads
s
High inrush current loads
s
Replacement for relays and fuses.
1.4 Quick reference data
Table 1:
Symbol
R
BLon
I
L
I
L(nom)
I
L(lim)
V
BG(oper)
Quick reference data
Parameter
battery-load on-state resistance
load current
nominal load current (ISO)
self-limiting load current
battery-ground operating voltage
Min
-
-
25
47
5.5
Max
14
44
-
100
35
Unit
mΩ
A
A
A
V
Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
2. Pinning information
mb
mb
B
S
1 2 3 4 5
I
P
L
1
MBL431
5
03pa56
MBL264
G
Fig 1. Pinning; SOT426 (D
2
-PAK).
Fig 2. Pinning; SOT263B-01.
Fig 3. Symbol; (HSS) TOPFET
TM
.
2.1 Pin description
Table 2:
Symbol
G
I
B
S
L
-
[1]
[2]
Pin description
Pin
1
2
3
4
5
mb
I/O
-
I
-
O
O
-
[2]
[1] [2]
Description
circuit common ground
input
battery
status
load
mounting base
It is not possible to make a connection to pin 3 of the SOT426 package.
The battery is connected to the mounting base.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
2 of 16
Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
3. Block diagram
battery
3/mb
4
status
VOLTAGE REGULATOR
CHARGE PUMP
POWER
MOSFET
SHORT CIRCUIT
PROTECTION
OVERVOLTAGE
PROTECTION
input
CONTROL
LOGIC
UNDERVOLTAGE
PROTECTION
LOW CURRENT
DETECT
TEMPERATURE
SENSOR
CURRENT LIMIT
2
load
5
03pa33
RG
1
ground
Fig 4. Elements of the high-side TOPFET switch.
4. Functional description
Table 3:
Truth table
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature
[1]
.
Input
L
H
H
H
H
H
H
[1]
Supply
UV
X
0
0
1
0
0
0
OV
X
0
0
0
1
0
0
LC
X
0
1
X
X
0
0
Load
SC
X
0
0
X
0
1
0
OT
X
0
0
X
0
X
1
Load
output
OFF
ON
ON
OFF
OFF
OFF
OFF
Status
H
H
L
H
H
L
L
Operating mode
off
on & normal
on & low current detect
supply undervoltage lockout
supply overvoltage shutdown
SC tripped
OT shutdown
The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold.
See “Overtemperature protection” characteristics in
Table 6.
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
3 of 16
Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
BG
I
L
P
tot
T
stg
T
j
T
mb
V
BGR
V
BGRR
Parameter
battery-ground supply voltage
load current
total power dissipation
storage temperature
junction temperature
mounting base temperature
reverse battery-ground supply
voltage
repetitive reverse battery-ground
supply voltage
input resistor
status resistor
input current
repetitive peak input current
status current
repetitive peak status current
non-repetitive battery-load
clamping energy
electrostatic discharge voltage
δ ≤
0.1; t
p
= 300
µs
T
j
= 150
°C
prior to turn-off; I
L
= 20 A
δ ≤
0.1; t
p
= 300
µs
[2]
[3]
Conditions
T
mb
≤
90
°C
T
mb
≤
25
°C
Min
-
-
-
−55
-
Max
50
44
115
+175
+150
260
16
32
Unit
V
A
W
°C
°C
°C
V
V
during soldering (≤ 10 s)
[1]
-
-
-
Reverse battery voltage
External resistor
R
I
R
S
I
I
I
IRM
I
S
I
SRM
E
BL(CL)S
3.3
3.3
−5
−50
−5
−50
-
-
-
+5
+50
+5
+50
460
kΩ
kΩ
mA
mA
mA
mA
mJ
Input current
Status current
Inductive load clamping
Electrostatic discharge
V
esd
Human body model; C = 100 pF;
R = 1.5 kΩ
-
2
kV
[1]
[2]
[3]
Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse current. The internal ground resistor limits the reverse battery ground current.
To limit input current during reverse battery and transient overvoltages.
To limit status current during reverse battery and transient overvoltages.
6. Thermal characteristics
Table 5:
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to mounted on printed circuit board;
ambient
minimum footprint; SOT426
Conditions
Min
-
-
Typ
0.86
50
Max
1.08
-
Unit
K/W
K/W
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
4 of 16
Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
7. Static characteristics
Table 6:
Static characteristics
Limits are valid for
−
40
°
C
≤
T
mb
≤
+150
°
C and typical values for T
mb
= 25
°
C unless otherwise specified.
Symbol
V
BG(CL)
V
BL(CL)
V
LG(CL)
Parameter
battery-ground clamping voltage
battery-load clamping voltage
load-ground clamping voltage
Conditions
I
G
= 1 mA;
Figure 6
I
L
= I
G
= 1 mA
I
L
= 10 mA;
Figure 12
and
14
I
L
= 20 A; t
p
= 300
µs
Supply voltage
V
BG(oper)
Current
I
B
battery quiescent current
V
LG
= 0 V;
Figure 10
T
mb
= 150
°C
T
mb
= 25
°C
I
L(off)
off-state load current
V
BL
= V
BG
T
mb
= 150
°C
T
mb
= 25
°C
I
G(on)
I
L(nom)
R
BLon
operating current
nominal load current (ISO)
battery-load on-state resistance
Figure 6
V
BL
= 0.5 V; T
mb
= 85
°C
9 V
≤
V
BG
≤
35 V; I
L
= 20 A;
Figure 5
T
mb
= 25
°C
T
mb
= 150
°C
V
BG
= 6 V; I
L
= 20 A
T
mb
= 25
°C
T
mb
= 150
°C
R
G
Input
[6]
I
I
V
IG(CL)
V
IG(on)
V
IG(off)
V
IG(on)(hys)
I
I(on)
I
I(off)
I
L(LC)
I
L(LC)(hys)
input current
input-ground clamping voltage
input-ground turn-on voltage
input-ground turn-off voltage
input-ground turn-on hysteresis
input turn-on current
input turn-off current
load low current detect
load low current detect hysteresis
V
IG
= 3 V
V
IG
= 1.5 V
−40 °C ≤
T
mb
≤
+150
°C
T
mb
= 25
°C;
Figure 15
V
IG
= 5 V
I
I
= 200
µA
Figure 9
20
5.5
-
1.5
-
-
10
0.55
0.65
-
90
7
2.4
2.1
0.3
-
-
-
1.8
0.44
160
8.5
3
-
-
100
-
4.4
2.9
-
µA
V
V
V
V
µA
µA
A
A
A
ground resistance
I
G
= 10 mA
[5]
[3]
[2]
[1]
Min
50
50
−18
−20
5.5
Typ
55
55
−23
−25
-
Max
65
65
−28
−30
35
Unit
V
V
V
V
V
Clamping voltage
battery-ground operating voltage
-
-
-
-
-
25
-
0.1
-
0.1
2
-
20
2
20
1
4
-
µA
µA
µA
µA
mA
A
Resistance
[4]
-
-
-
-
95
10
-
13
-
150
14
25
18
33
190
mΩ
mΩ
mΩ
mΩ
Ω
Low current detection
[7][10]
9397 750 10768
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 17 March 2003
5 of 16
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