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BCX55-10TA

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size45KB,1 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

BCX55-10TA Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,

BCX55-10TA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V
Base Number Matches1
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