BAV23T/R datasheet, PDF - EEWORLD Datasheet

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BAV23T/R: Description0.225A, 250V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor diode; File Size71KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BAV23T/R Overview

0.225A, 250V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4

BAV23T/R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HALOGEN FREE
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Maximum non-repetitive peak forward current	2.5 A
Number of components	2
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.225 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	250 V
Maximum reverse current	0.1 µA
Maximum reverse recovery time	0.05 µs
Reverse test voltage	200 V
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Base Number Matches	1

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BAV23 series

Dual high-voltage switching diodes

Rev. 06 — 3 March 2008

Product data sheet

1. Product proﬁle

1.1 General description

Dual high-voltage switching diodes, encapsulated in small Surface-Mounted

Device (SMD) plastic packages.

Table 1.

Product overview

Package

NXP

BAV23A/DG

BAV23C/DG

BAV23S

BAV23S/DG

BAV23

BAV23/DG

[1]

/DG: halogen free

Type number

[1]

Conﬁguration

JEDEC

TO-236AB

dual common anode

dual common cathode

dual series

dual isolated

SOT23

SOT143B

1.2 Features

High switching speed: t

≤

50 ns

Low leakage current

Repetitive peak reverse voltage:

RRM

≤

250 V

Low capacitance: C

≤

2 pF

Small SMD plastic package

1.3 Applications

High-speed switching at high voltage

High-voltage general-purpose switching

1.4 Quick reference data

Table 2.

Symbol

Per diode

[1]

Quick reference data

Parameter

reverse current

reverse voltage

reverse recovery time

[1]

Conditions

= 200 V

Min

Typ

Max

100

200

Unit

When switched from I

= 10 mA to I

= 10 mA; R

= 100

Ω;

measured at I

= 1 mA.

BAV23T/R Related Products

	BAV23T/R	BAV23ST/R
Description	0.225A, 250V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-4	DIODE 0.225 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	R-PDSO-G4	PLASTIC PACKAGE-3
Contacts	4	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	HALOGEN FREE	HALOGEN FREE
Configuration	SEPARATE, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V	1.25 V
JESD-30 code	R-PDSO-G4	R-PDSO-G3
JESD-609 code	e3	e3
Maximum non-repetitive peak forward current	2.5 A	2.5 A
Number of components	2	2
Number of terminals	4	3
Maximum operating temperature	150 °C	150 °C
Maximum output current	0.225 A	0.225 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Maximum power dissipation	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	250 V	250 V
Maximum reverse current	0.1 µA	0.1 µA
Maximum reverse recovery time	0.05 µs	0.05 µs
surface mount	YES	YES
Terminal surface	Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40

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