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BSO303P
OptiMOS
-P
Power-Transistor
TM
Product Summary
V
DS
R
DS(on)
I
D
1
2
3
4
8
7
6
5
Feature
•
Dual P-Channel
•
Enhancement mode
•
Logic Level
•
150°C operating temperature
•
Avalanche rated
•
dv/dt rated
S1
G1
S2
G2
-30
21
-8.2
V
mΩ
A
D1
D1
D2
D2
SIS00070
Top View
Type
BSO303P
Package
P-SO 8
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-8.2
-6.6
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j
,
T
stg
-32.4
97
-6
±20
2
-55... +150
55/150/56
Avalanche energy, single pulse
I
D
=-8.2 A ,
V
DD
=-25V,
R
GS
=25Ω
mJ
kV/µs
V
W
°C
Reverse diode dv/dt
I
S
=-8.2A,
V
DS
=-24V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev.1.2
Page 1
2002-01-08
BSO303P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint, t < 10s
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
-
-
max.
50
110
62.5
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-30
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-100µA
Zero gate voltage drain current
V
DS
=-30V,
V
GS
=0,
T
j
=25°C
V
DS
=-30V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
26
18
-1
-100
-100
32
21
nA
mΩ
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-6.6A
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-8.2A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t
≤10
sec.
Rev.1.2
Page 2
2002-01-08
BSO303P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
V
GS
=-10V,
I
D
=-1A,
R
G
=6Ω
çV
DS
ç≥2*çI
D
ç*R
DS(on)max
I
D
=-6.6A
V
GS
=0,
V
DS
=-25V,
f=1MHz
Symbol
Conditions
min.
11
-
-
-
-
-
-
-
Values
typ.
22
1761
495
410
10.6
12.9
55.4
39.3
max.
-
-
-
-
15.9
19.3
83.1
59
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0, |I
F
| = |I
D
|
V
R
=-15V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-24V,
I
D
=-8.2A
-
-
-
-
-4.25
-15.2
-48.3
-2.4
-6.4
-23
-72.5
-
nC
V
DD
=-24V,
I
D
=-8.2A,
V
GS
=0 to -10V
V
(plateau)
V
DD
=-24V,
I
D
=-8.2A
I
S
I
SM
V
T
A
=25°C
-
-
-
-
-
-
-
-0.88
24.4
12.8
-2.2
-32.4
-1.32
36.6
19.2
A
ns
nC
Rev.1.2
Page 3
2002-01-08
Embedded System
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