HM5117805TT-6 datasheet, PDF - EEWORLD Datasheet

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HM5117805TT-6: Description16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh; Categorystorage storage; File Size489KB，32 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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HM5117805TT-6 Overview

16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh

HM5117805TT-6 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ELPIDA
Parts packaging code	TSOP
package instruction	TSOP2, TSOP28,.46
Contacts	28
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	18.41 mm
memory density	16777216 bi
Memory IC Type	EDO DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP28,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	1.2 mm
self refresh	NO
Maximum standby current	0.001 A
Maximum slew rate	0.1 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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Description

Features

HM5117805 Series

16 M EDO DRAM (2-Mword

8-bit)

2 k Refresh

E0156H10 (Ver. 1.0)

(Previous ADE-203-630D (Z))

Jun. 27, 2001

The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord

8-bit. It employs the most

adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta

Out (ED O) P age Mode as a high spee d ac ce ss mode. Multiplexe d addr ess input per mits the HM5117805 to

be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.

•

Single 5 V (±10%)

•

Access time: 50 ns/60 ns/70 ns (max)

•

Power dissipation



Active mode: 605 mW/550 mW/495 mW (max)



Standby mode : 11 mW (max)

: 0.83 mW (max) (L-version)

•

EDO page mode capability

•

Long refresh period



2048 refresh cycles : 32 ms

: 128 ms (L-version)

•

4 variations of refresh



RAS-only

refresh



CAS-before-RAS

refresh



Hidden refresh



Self refresh (L-version)

•

Battery backup operation (L-version)

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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