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HM5117805TS-6

Description
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
Categorystorage    storage   
File Size489KB,32 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric View All

HM5117805TS-6 Overview

16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh

HM5117805TS-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerELPIDA
Parts packaging codeTSOP
package instructionTSOP2, TSOP28,.34
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G28
JESD-609 codee0
length18.41 mm
memory density16777216 bi
Memory IC TypeEDO DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP28,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle2048
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
EO
Description
Features
HM5117805 Series
16 M EDO DRAM (2-Mword
×
8-bit)
2 k Refresh
E0156H10 (Ver. 1.0)
(Previous ADE-203-630D (Z))
Jun. 27, 2001
The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord
×
8-bit. It employs the most
adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta
Out (ED O) P age Mode as a high spee d ac ce ss mode. Multiplexe d addr ess input per mits the HM5117805 to
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
Single 5 V (±10%)
Access time: 50 ns/60 ns/70 ns (max)
Power dissipation
Active mode: 605 mW/550 mW/495 mW (max)
Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
EDO page mode capability
Long refresh period
2048 refresh cycles : 32 ms
: 128 ms (L-version)
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
LP
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