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HRF3205, HRF3205S
Data Sheet
December 2001
100A, 55V, 0.008 Ohm, N-Channel, Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.
Features
• 100A, 55V (See Note)
• Low On-Resistance, r
DS(ON)
= 0.008Ω
• Temperature Compensating PSPICE
®
Model
• Thermal Impedance SPICE Model
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HRF3205
HRF3205S
PACKAGE
TO-220AB
TO-263AB
BRAND
HRF3205
HRF3205S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B
HRF3205, HRF3205S
T
C
= 25
o
C, Unless Othewise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
Absolute Maximum Ratings
55
55
±20V
100
390
Figure 10
175
1.17
-55 to 175
300
260
V
V
V
A
A
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±20V
MIN
55
2
-
-
-
-
-
-
-
-
-
V
DD
= 44V, I
D
≅
59A,
V
GS
= 10V, I
g(REF)
= 3mA
(Figure 6)
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 5)
-
-
-
-
-
-
Measured From the Contact
Modified MOSFET
Screw on Tab to Center of Die Symbol Showing the
Internal Devices In-
Measured From the Drain
ductances
Lead, 6mm (0.25in) From
D
Package to Center of Die
Measured From the Source
Lead, 6mm (0.25in) From Head-
er to Source Bonding Pad
L
D
G
L
S
S
TYP
-
-
-
-
-
0.057
0.0065
14
100
43
70
-
-
-
4000
1300
480
7.5
MAX
-
4
25
250
100
-
0.008
-
-
-
-
170
32
74
-
-
-
-
UNITS
V
V
µA
µA
nA
V
Ω
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Breakdown Voltage Temperature
Coefficient
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
I
GSS
∆V
(BR)DSS
/ Reference to 25
o
C, I
D
= 250µA
∆T
J
r
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
S
I
D
= 59A, V
GS
= 10V (Figure 4)
V
DD
= 28V, I
D
≅
59A,
R
L
= 0.47Ω, V
GS
=
10V,
R
GS
= 2.5Ω
-
Internal Drain Inductance
L
D
-
4.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-220
TO-263 (PCB Mount, Steady State)
-
-
-
-
-
-
0.85
62
40
o
C/W
o
C/W
o
C/W
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B
HRF3205, HRF3205S
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current (Note 2)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
MOSFET
Symbol Showing
The Integral
Reverse P-N
Junction Diode
D
MIN
-
-
TYP
-
-
MAX
100
(Note 1
390
UNITS
A
A
G
S
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
NOTE:
V
SD
t
rr
Q
RR
I
SD
= 59A (Note 4)
I
SD
= 59A, dI
SD
/dt = 100A/µs (Note 4)
I
SD
= 59A, dI
SD
/dt = 100A/µs (Note 4)
-
-
-
-
110
450
1.3
170
680
V
ns
nC
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)
Typical Performance Curves
1000
I
D
, DRAIN TO SOURCE CURRENT (A)
V
GS
IN DECENDING ORDER
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100 4.5V
1000
I
D
, DRAIN TO SOURCE CURRENT (A)
V
GS
IN DECENDING ORDER
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
0.1
20µs PULSE WIDTH
T
C
= 25
o
C
1.0
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
20µs PULSE WIDTH
T
C
= 175
o
C
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
FIGURE 2. OUTPUT CHARACTERISTICS
1000
I
D
, DRAIN TO SOURCE CURRENT(A)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
I
D
= 98A, V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
100
T
J
= 25
o
C
1.5
10
T
J
= 175
o
C
1.0
1
3
4.5
6
V
DS
= 25V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
7.5
9
0.5
0
-80
-40
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
FIGURE 3. TRANSFER CHARACTERISTICS
FIGURE 4. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B
HRF3205, HRF3205S
Typical Performance Curves
8000
V
GS
, GATE TO SOURCE VOLTAGE (V)
7000
C, CAPACITANCE (pF)
6000
5000
C
ISS
4000
3000
C
OSS
2000
1000
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
(Continued)
20
I
D
= 59A
V
DS
= 28V
16
V
DS
= 11V
12
V
DS
= 44V
8
4
0
0
36
72
108
144
180
Q
g
, GATE CHARGE (nC)
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
1000
I
SD
, REVERSE DRAIN CURRENT(A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
1000
100
I
D
, DRAIN CURRENT (A)
10µs
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100µs
1ms
10ms
10
T
J
= 25
o
C
10
1
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1
1
V
DSS(MAX)
= 55V
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 7. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA
120
1000
I
AS
, AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
90
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
60
100
STARTING T
J
= 25
o
C
30
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
175
STARTING T
J
= 150
o
C
T
C
, CASE TEMPERATURE (
o
C)
10
0.01
1
10
0.1
t
AV
, TIME IN AVALANCHE (ms)
100
FIGURE 9. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
©2001 Fairchild Semiconductor Corporation
HRF3205, HRF3205S Rev. B
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