HM6216255HC Series
4M High Speed SRAM (256-kword
×
16-bit)
ADE-203-1196 (Z)
Preliminary
Rev. 0.0
Oct. 31, 2000
Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word
×
16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-
mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
•
Single 5.0 Vsupply : 5.0 V ± 10 %
•
Access time: 10 ns (max)
•
Completely static memory
No clock or timing strobe required
•
Equal access and cycle times
•
Directly TTL compatible
All inputs and outputs
•
Operating current: 170 mA (max)
•
TTL standby current: 40 mA (max)
•
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
•
Data retansion current: 0.8 mA (max) (L-version)
•
Data retantion voltage: 2 V (min) (L-version)
•
Center V
CC
and V
SS
type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HM6216255HC Series
Operation Table
CS
H
L
L
L
L
L
L
L
L
L
Note:
OE
×
H
L
L
L
L
×
×
×
×
WE
×
H
H
H
H
H
L
L
L
L
×:
H or L
LB
×
×
L
L
H
H
L
L
H
H
UB
×
×
L
H
L
H
L
H
L
H
Mode
Standby
Output disable
Read
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I/O1–I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9–I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
—
—
Read cycle
Read cycle
Read cycle
—
Write cycle
Write cycle
Write cycle
—
Lower byte read I
CC
Upper byte read I
CC
—
Write
I
CC
I
CC
Lower byte write I
CC
Upper byte write I
CC
—
I
CC
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +7.0
–0.5*
1
to V
CC
+ 0.5*
2
1.0
0 to +70
–55 to +125
–10 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. V
T
(min) = –2.0 V for pulse width (under shoot)
≤
6 ns.
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns.
5
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