Rev 3: Nov 2004
AO3418, AO3418L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3418 uses advanced trench technology to
provide excellent R
DS(ON)
, very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3418L ( Green Product ) is offered in
a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 3.8 A
R
DS(ON)
< 60mΩ (V
GS
= 10V)
R
DS(ON)
< 70mΩ (V
GS
= 4.5V)
R
DS(ON)
< 155mΩ (V
GS
= 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
30
±12
3.8
3.1
15
1.4
0.9
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO3418, AO3418L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=3.8A
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=3.5A
V
GS
=2.5V, I
D
=1A
V
DS
=5V, I
D
=3.8A
1
15
43
64
52
101
11.7
0.81
60
85
70
155
1
2.5
270
1.4
Min
30
0.001
1
5
100
1.8
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
226
39
29
1.4
3
1.4
0.55
2.6
3.2
14.5
2.1
10.2
3.8
1.7
3.6
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=4.5V, V
DS
=15V, I
D
=3.8A
V
GS
=10V, V
DS
=15V, R
L
=3.9Ω,
R
GEN
=6Ω
I
F
=3.8A, dI/dt=100A/µs
I
F
=3.8A, dI/dt=100A/µs
4
5
22
3
13
5
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3418, AO3418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
3.5V
4V
6V
3V
6
I
D
(A)
10
V
DS
=5V
8
9
I
D
(A)
6
V
GS
=2.5V
3
4
125°C
2
25°C
0
0
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
0
0
0.5
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
3.5
200
175
150
R
DS(ON)
(m
Ω
)
125
100
75
50
25
0
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
I
D
=3.8A
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
1.8
V
GS
=4.5V
Normalized On-Resistance
1.6
1.4
1.2
1
I
D
=3.5A
270
1.7
3.6
I
D
=3.8A
V
GS
=2.5V
I
D
=1A
V
GS
=10V
0.8
0
25
50
75
100
125
150
13
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
AO3418, AO3418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
400
V
DS
=15V
I
D
=3.8A
Capacitance (pF)
350
300
250
200
150
100
50
0
0
1
2
3
4
5
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
oss
C
rss
C
iss
4
V
GS
(Volts)
3
2
1
270
20
T
J(Max)
=150°C
T
A
=25°C
1.7
3.6
10.0
I
D
(Amps)
1ms
0.1s 10ms
Power (W)
R
DS(ON)
limited
10µs
100µs
15
10
1.0
1s
10s
DC
0.1
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
5
0
0.001
13
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
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