Rev
2:
Nov 2004
AO6409, AO6409L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6409 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
AO6409L ( Green Product ) is offered in a lead-free
package.
Features
V
DS
(V) = -20V
I
D
= -5 A
R
DS(ON)
< 45mΩ (V
GS
= -4.5V)
R
DS(ON)
< 56mΩ (V
GS
= -2.5V)
R
DS(ON)
< 75mΩ (V
GS
= -1.8V)
ESD Rating: 3000V HBM
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-5.0
-4.2
-30
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
47.5
74
37
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6409, AO6409L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±4.5V
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-5A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-2.5V, I
D
=-4A
V
GS
=-1.8V, I
D
=-2A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=-5V, I
D
=-5A
8
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
-0.3
-25
37
48
46
57
16
-0.78
-1
-2.2
1450
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
205
160
6.5
17.2
V
GS
=-4.5V, V
DS
=-10V, I
D
=-5A
1.3
4.5
9
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.0Ω,
R
GEN
=3Ω
I
F
=-5A, dI/dt=100A/µs
I
F
=-5A, dI/dt=100A/µs
14
91
31
33
14
45
60
56
75
-0.55
Min
-20
-1
-5
±1
±10
-1
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Typ
Max
Units
V
µA
µA
µA
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6409, AO6409L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-8V
20
15
10
V
GS
=-1.5V
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
80
Normalized On-Resistance
V
GS
=-1.8V
R
DS(ON)
(m
Ω
)
60
V
GS
=-2.5V
40
V
GS
=-4.5V
20
0
2
4
6
8
10
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.6
I
D
=-4A, V
GS
=-2.5V
1.4
I
D
=-3A, V
GS
=-1.8V
2
0
0
0.5
1
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
10
-4.5V
-3.0V
-2.0V
-I
D
(A)
-I
D
(A)
-2.5V
6
4
125°C
8
V
DS
=-5V
1.2
I
D
=-5A, V
GS
=-4.5V
1.0
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=-5A
-I
S
(A)
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO6409, AO6409L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
0
0
5
10
15
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=-10V
I
D
=-5A
Capacitance (pF)
2400
2000
1600
1200
800
C
oss
400
C
rss
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
40
10µs
30
100µs
1ms
Power (W)
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10.0
20
1.0
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
10
10ms
0.1s
10
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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