Rev 2: Nov. 2004
AOB414, AOB414L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB414 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. AOB414L ( Green Product ) is
offered in a lead-free package.
Features
V
DS
(V) = 30V
I
D
= 110A
R
DS(ON)
< 4.2mΩ (V
GS
= 10V)
R
DS(ON)
< 4.8mΩ (V
GS
= 4.5V)
TO-263
D2-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
B,G
Current
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±12
110
80
200
30
140
100
50
3.1
2
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
G
B
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
8.1
33
0.84
Max
12
40
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=30A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=30A
Forward Transconductance
V
DS
=5V, I
D
=30A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
T
J
=125°C
0.8
110
3.2
5
3.8
102
0.64
1
110
9130
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
625
387
0.4
72.4
V
GS
=4.5V, V
DS
=15V, I
D
=30A
12.8
18.4
15
V
GS
=10V, V
DS
=15V, R
L
=0.5Ω,
R
GEN
=3Ω
I
F
=30A, dI/dt=100A/µs
29.2
106.5
52
31.2
20.3
4.2
6
4.8
1.1
Min
30
1
5
100
1.5
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(4.5V) Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on steady-state R
θJA
and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
60
I
D
(A)
40
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
0
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
Normalized On-Resistance
1.6
1.4
1.2
1
0.8
0
20
40
60
80
100
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
I
D
=30A
V
GS
=4.5V
50
4.5V
3.0V
I
D
(A)
2.5V
V
GS
=2V
20
125°C
25°C
40
30
V
DS
=5V
60
5.0
4.5
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
4.0
V
GS
=10V
3.5
V
GS
=10V
3.0
12
1.0E+02
1.0E+01
10
I
D
=30A
R
DS(ON)
(m
Ω
)
I
S
(A)
8
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
4
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
6
2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
C
rss
0
0
10
20
30
40
50
60
70
80
90
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
V
DS
=15V
I
D
=30A
Capacitance (pF)
10000
100000
C
iss
1000
C
oss
1000
R
DS(ON)
limited
10ms
0.1s
10
1s
10s
1
T
J(Max)
=150°C
T
A
=25°C
DC
1ms
100µs
Power (W)
200
160
120
80
40
0
0.01
T
J(Max)
=150°C
T
A
=25°C
100
I
D
(Amps)
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
0.001
0.00001
T
on
T
100
1000
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
I
D
(A), Peak Avalanche Current
T
A
=25°C
100
80
60
40
20
0
0.00001
120
100
80
60
40
20
0
0.0001
0.001
0.01
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
t
A
=
L
⋅
I
D
BV
−
V
DD
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
120
100
Current rating I
D
(A)
80
60
40
20
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
Power Dissipation (W)
京公网安备 11010802033920号
EEWORLD
